We propose that 1 + 1 + 1 triple-junction solar cells can provide an increased efficiency, as well as a higher open circuit voltage, compared to tandem solar cells.

and inverters exhibit the best performance among perovskite PFETs. The present work demonstrates that triple cation perovskite can provide the ambipolar PFETs and complementary metal-oxide-semiconductor (CMOS)-like circuits for next generation, large-area microelectronics with low manufacturing cost.The PFETs with bottom contacts and a top gate were constructed by spin coating the triple cation precursor solution in anhydrous dimethylformamide:dimethylsulfoxide (DMF:DMSO) 4:1 (v:v) on the substrates (Figure 1a). The perovskite solution was deposited in two steps at 1000 and 6000 rpm for 10 and 30 s, respectively. Solvent treatment was conducted during the second step, where 100 µL chlorobenzene was poured on the spinning substrate followed by annealing at 100 °C for 1 h. Triple cation PFETs with various Cs amounts were fabricated, and their respective transfer and output characteristics are compared in Figures S1-S6 (Supporting Information). Figures S1-S6 (Supporting Information) illustrate transfer curves of the ambipolar triple cation PFETs, and I DS 1/2 versus V DS plot as a function of Cs cation. As Cs increased from 0% to 10%, the mobility increased monotonically from 1.95 × 10 −2 to 1.25 cm 2 V −1 s −1 for holes and from 4.81 × 10 −2 to 4.11 × 10 −2 cm 2 V −1 s −1 for electrons (Table S1, Supporting Information). However, no significant change in the charge-carrier mobilities was observed when Cs is higher than 15%. Figure 1b,c demonstrates the transfer characteristics for the p-and n-channel PFETs (Cs = 15%), respectively, with poly(methyl methacrylate) (PMMA) as a gate dielectric, in which ambipolar charge-transport characteristics were observed. Figure 1d,e represents the typical output characteristics with good current modulation. PMMA was selected since it can be processed at low temperature, soluble in a solvent orthogonal to triple cation, and contains negligible OH groups that could trap electrons. When V DS is low, the potential for the hole and electron injection cannot exceed the threshold voltage simultaneously. As a result, only one carrier can be accumulated, and the devices work in the unipolar model. Under these conditions, the transistors exhibit a very high I ON /I OFF ratio, typically higher than 10 4 at a high gate voltage (V GS = 130 V). The charge-carrier mobilities were determined using the drain current (I DS ) in the saturation region; Table S1 (Supporting Information) summarizes the maximum and average p-and n-channel mobilities. The maximum µ h and µ e mobilities are calculated to be 2.1 and 2.5 cm 2 V −1 s −1 , respectively. To the best of our knowledge, this is the highest carrier mobility for the perovskite PFETs. [17] The incorporation of Cs cation (Cs = 0%-30%) has notable effect on the performance of ambipolar triple cation PFETs.We have exposed freshly prepared PFETs to ambient air and monitored the p-and n-channel performance as a function of Organolead halide perovskites (ABX 3 where A is organic or inorganic cation, B is metal cation, and X is halogen anion) have signi...

Highly efficient green, red, and blue perovskite light‐emitting diode based metal‐oxide charge injection layers are demonstrated. This is an important step toward the realization of next‐generation solid‐state lighting and devices for use in full‐color large‐area display applications.

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A molecular cross-linking approach of the perovskite grains combined with amine-based surface passivation leads to hysteresis-free perovskite transistors.

The effects of UV-ozone (UVO) irradiation on copper-doped nickel acetate and its applicability to perovskite solar cells were investigated. UVO irradiation of copper-doped nickel acetate significantly increased the electrical conductivity (from 4.28 × 10(-4) S cm(-1) to 5.66 × 10(-2) S cm(-1)), which is due to the increased carrier concentration (from 3.53 × 10(13) cm(-3) to 2.41 × 10(16) cm(-3)), and the charge extraction efficiency was enhanced, leading to better compatibility with the hole transport layer. By UVO irradiation, the work function was increased from 4.95 eV to 5.33 eV by the surface dipole formation, which effectively reduced the interface barrier between the hole transport layer and the MAPbI3 light absorbing layer. UVO Irradiation of the underlying layer also allows the MAPbI3 precursors to form better morphology with highly arranged crystallinity. Compared to the cells using non-irradiated copper doped nickel acetate, UVO-irradiated copper-doped nickel acetate devices showed an enhanced open-circuit voltage (3% increase), short circuit current (16% increase), fill factor (5% increase), showing an enhanced power conversion efficiency of 12.2% (21% increase).

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