The S-passivated Mo2C behaves like a transition metal sulfide with strong binding to LiPSs, a small LiPS conversion energy barrier, and a low Li2S decomposition barrier.
Indium (In) as an unconventional doping element for Bi2Te3 is applied in this work to investigate the effect of In doping on the microstructure and thermoelectric transport properties of Bi2Te3-based alloys prepared via a unique high-pressure method (high pressure and high temperature, HPHT). The synthesis time of sample is sharply shortened comparing with conventional preparation methods. Doped In into Bi2Te3 martix can induce the multiple textures and microstructures, effectively scattering different frequency phonons. In the meantime, the electrical transport properties are also significantly modulated because of In atoms as electron donors. As a result, the lattice thermal conductivity and electrical resistivity are dramatically reduced, especially a decrease of 64-54% in 305-585K for lattice thermal conductivity of the samples with In content from 1 to 2 at.%. An acceptable ZT value of 0.65 at 385K is achieved from as-prepared Bi1.9In0.1Te3 bulk materials for In as a dopant in Bi2Te3 matrix.
Silicon carbide (SiC) is a substance found in natural diamond inclusions. Analyzing the influence of SiC doping on the properties of synthetic diamonds is vital to understanding the growth mechanism...
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.