For decades now, silicon has been the workhorse of the microelectronics revolution and a key enabler of the information age. Owing to its excellent optical properties in the near- and mid-infrared, silicon is now promising to have a similar impact on photonics. The ability to incorporate both optical and electronic functionality in a single material offers the tantalizing prospect of amplifying, modulating and detecting light within a monolithic platform. However, a direct consequence of silicon's transparency is that it cannot be used to detect light at telecommunications wavelengths. Here, we report on a laser processing technique developed for our silicon fibre technology through which we can modify the electronic band structure of the semiconductor material as it is crystallized. The unique fibre geometry in which the silicon core is confined within a silica cladding allows large anisotropic stresses to be set into the crystalline material so that the size of the bandgap can be engineered. We demonstrate extreme bandgap reductions from 1.11 eV down to 0.59 eV, enabling optical detection out to 2,100 nm.

Semiconductor core optical fibers with a silica cladding are of great interest in nonlinear photonics and optoelectronics applications. Laser crystallization has been recently demonstrated for crystallizing amorphous silicon fibers into crystalline form. Here we explore the underlying mechanism by which long single-crystal silicon fibers, which are novel platforms for silicon photonics, can be achieved by this process. Using finite element modeling, we construct a laser processing diagram that reveals a parameter space within which single crystals can be grown. Utilizing this diagram, we illustrate the creation of single-crystal silicon core fibers by laser crystallizing amorphous silicon deposited inside silica capillary fibers by high-pressure chemical vapor deposition. The single-crystal fibers, up to 5.1 mm long, have a very well-defined core/cladding interface and a chemically pure silicon core that leads to very low optical losses down to ∼0.47–1 dB/cm at the standard telecommunication wavelength (1550 nm). It also exhibits a photosensitivity that is comparable to bulk silicon. Creating such laser processing diagrams can provide a general framework for developing single-crystal fibers in other materials of technological importance.

An octave-spanning supercontinuum is generated in a hydrogenated amorphous silicon core fiber when pumped in the mid-infrared regime. The broadband wavelength conversion which extends from the edge of the telecommunications band into the mid-infrared (1.64-3.37 μm) is generated by four-wave mixing (FWM) and subsequent pulse break-up, facilitated by the high material nonlinear figure of merit and the anomalous dispersion of the relatively small 1.7 μm diameter core fiber. The FWM sidebands and corresponding supercontinuum can be tuned through the pump parameters, and show good agreement with the predicted phase-matching curves for the fiber.