During the months of May and June in the year 2007, a survey was conducted regarding coral reef communities in the remote atolls (Zhubi Reef and Meiji Reef) of Nansha Islands, southern South China Sea. The goals of the survey were to: (1) for the first time, compile a scleractinian coral check-list; (2) estimate the total richness, coral cover, and growth forms of the community; and (3) describe preliminary patterns of community structure according to geomorphological units. Findings of this survey revealed a total of 120 species of scleractinia belonging to 40 genera, while the average coral cover was 21 %, ranging from less than 10 % to higher than 50 %. Branching and massive corals were also found to be the most important growth forms of the whole coral community, while Acropora, Montipora, and Porites were the three dominant genera in the overall region, with their contributions to total coral cover measuring 21, 22, and 23 %, respectively. Overall, coral communities of the Nansha Islands were in a relative healthy condition with high species diversity and coral cover. Spatial pattern of coral communities existed among various geomorphological units. Mean coral cover was highest in the patch reef within the lagoon, followed by the fore reef slope, reef flat, and lagoon slope. The greatest contributors to total coral cover were branching Acropora (45 %) in the lagoon slope, branching Montipora (44 %) in the reef flat, and massive Porites (51 %) in the patch reef. Coral cover in the fore reef revealed a greater range of genera than in other habitats. The leeward fore reef slope had higher coral cover (> 50 %) when compared with the windward slope (< 10 %). The coral communities of the inner reef flat were characterized by higher coral cover (27 %) and dominant branching Montipora corals, while lower coral cover (4 %) was dominated by Psammocora with massive growth forms on the outer reef flat. Destructive fishing and coral bleaching were two major threats to coral communities in the study area.
In the present work, n-type zinc oxide (ZnO) and p-type tin monoxide (SnO) based heterostructure diodes were fabricated on an indium-tin-oxide glass using the radio frequency magnetron sputtering technique. The prepared ZnO/SnO diodes exhibited a typical rectifying behavior, with a forward to reverse current ratio about 500 ± 5 at 2 V and turn on voltage around 1.6 V. The built-in voltage of the diode was extracted to be 0.5 V based on the capacitance-voltage (C–V) measurement. The valence and conduction band offsets were deliberated through the band energy diagram of ZnO/SnO heterojunction, as 1.08 eV and 0.41 eV, respectively. The potential barrier-dependent carrier transportation mechanism across the space charge region was also investigated.
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