Investigations of two-dimensional transition-metal chalcogenides (TMCs) have recently revealed interesting physical phenomena, including the quantum spin Hall effect, valley polarization and two-dimensional superconductivity , suggesting potential applications for functional devices. However, of the numerous compounds available, only a handful, such as Mo- and W-based TMCs, have been synthesized, typically via sulfurization, selenization and tellurization of metals and metal compounds. Many TMCs are difficult to produce because of the high melting points of their metal and metal oxide precursors. Molten-salt-assisted methods have been used to produce ceramic powders at relatively low temperature and this approach was recently employed to facilitate the growth of monolayer WS and WSe. Here we demonstrate that molten-salt-assisted chemical vapour deposition can be broadly applied for the synthesis of a wide variety of two-dimensional (atomically thin) TMCs. We synthesized 47 compounds, including 32 binary compounds (based on the transition metals Ti, Zr, Hf, V, Nb, Ta, Mo, W, Re, Pt, Pd and Fe), 13 alloys (including 11 ternary, one quaternary and one quinary), and two heterostructured compounds. We elaborate how the salt decreases the melting point of the reactants and facilitates the formation of intermediate products, increasing the overall reaction rate. Most of the synthesized materials in our library are useful, as supported by evidence of superconductivity in our monolayer NbSe and MoTe samples and of high mobilities in MoS and ReS. Although the quality of some of the materials still requires development, our work opens up opportunities for studying the properties and potential application of a wide variety of two-dimensional TMCs.

The discovery of monolayer superconductors bears consequences for both fundamental physics and device applications. Currently, the growth of superconducting monolayers can only occur under ultrahigh vacuum and on specific lattice-matched or dangling bond-free substrates, to minimize environment- and substrate-induced disorders/defects. Such severe growth requirements limit the exploration of novel two-dimensional superconductivity and related nanodevices. Here we demonstrate the experimental realization of superconductivity in a chemical vapour deposition grown monolayer material—NbSe2. Atomic-resolution scanning transmission electron microscope imaging reveals the atomic structure of the intrinsic point defects and grain boundaries in monolayer NbSe2, and confirms the low defect concentration in our high-quality film, which is the key to two-dimensional superconductivity. By using monolayer chemical vapour deposited graphene as a protective capping layer, thickness-dependent superconducting properties are observed in as-grown NbSe2 with a transition temperature increasing from 1.0 K in monolayer to 4.56 K in 10-layer.

Large-area and high-quality 2D transition metal tellurides are synthesized by the chemical vapor deposition method. The as-grown WTe maintains two different stacking sequences in the bilayer, where the atomic structure of the stacking boundary is revealed by scanning transmission electron microscopy. The low-temperature transport measurements reveal a novel semimetal-to-insulator transition in WTe layers and an enhanced superconductivity in few-layer MoTe .

The preparation and optoelectronic response of flexible composites via noncovalent coupling of quantum dots to chemically converted graphene is presented. The photoinduced charge transfer is confirmed by photoconductivity measurements and the photosensitivity is improved with increasing loadings of quantum dots. This opens up a new effective route to form composites for future large‐area flexible and transparent optoelectronic devices.

To study the interface between a conventional superconductor and a topological insulator, we fabricated Pb-Bi2Te3-Pb lateral and sandwiched junctions, and performed electron transport measurements down to low temperatures. The results show that there is a strong superconducting proximity effect between Bi2Te3 and Pb, as that a supercurrent can be established along the thickness direction of the Bi2Te3 flakes (100~300 nm thick) at a temperature very close to the superconducting Tc of Pb. Moreover, a Josephson current can be established over several microns in the lateral direction between two Pb electrodes on the Bi2Te3 surface. We have further demonstrated that superconducting quantum interference devices can be constructed based on the proximity-effect-induced superconductivity. The critical current of the devices exhibits s-wave-like interference and Fraunhofer diffraction patterns. With improved designs, Josephson devices of this type would provide a test-bed for exploring novel phenomena such as Majorana fermions in the future.

Two-dimensional transition metal dichalcogenides MX 2 ( M = W, Mo, Nb, and X = Te, Se, S) with strong spin–orbit coupling possess plenty of novel physics including superconductivity. Due to the Ising spin–orbit coupling, monolayer NbSe 2 and gated MoS 2 of 2 H structure can realize the Ising superconductivity, which manifests itself with in-plane upper critical field far exceeding Pauli paramagnetic limit. Surprisingly, we find that a few-layer 1 T d structure MoTe 2 also exhibits an in-plane upper critical field which goes beyond the Pauli paramagnetic limit. Importantly, the in-plane upper critical field shows an emergent two-fold symmetry which is different from the isotropic in-plane upper critical field in 2 H transition metal dichalcogenides. We show that this is a result of an asymmetric spin–orbit coupling in 1 T d transition metal dichalcogenides. Our work provides transport evidence of a new type of asymmetric spin–orbit coupling in transition metal dichalcogenides which may give rise to novel superconducting and spin transport properties.

We have investigated the conductance spectra of Sn-Bi2Se3 interface junctions down to 250 mK and in different magnetic fields. A number of conductance anomalies were observed below the superconducting transition temperature of Sn, including a small gap different from that of Sn, and a zero-bias conductance peak growing up at lower temperatures. We discussed the possible origins of the smaller gap and the zero-bias conductance peak. These phenomena support that a proximityeffect-induced chiral superconducting phase is formed at the interface between the superconducting Sn and the strong spin-orbit coupling material Bi2Se3.

Self-assembled, one-dimensional nanostructures of N,N′-bis(2-(trimethylammonium iodide)ethylene)perylene-3,4,9,10-tetracarboxyldiimide (PTCDI-I) with tunable morphologies were successfully prepared by a facile evaporation method. PTCDI-I nanotubes with diameters of approximately 100-300 nm were obtained by the evaporation of the aqueous solution of PTCDI-I, while long nanorods with diameters of approximately 200-300 nm were produced by slow evaporation of the methanolic solution of PTCDI-I. Studies of the nanostructures formed at different stages suggested that the formation of nanotubes and nanorods could be ascribed to different crystallization processes from different solutions. The PTCDI-I nanostructures were redox-active, and fourprobe measurements based on a single nanotube or nanorod exhibited resistance decreased by 2 to 3 orders of magnitude after being exposed to reducing agents such as hydrazine or phenylhydrazine. Such high resistance modulations indicate that these nanostructures will be useful as building blocks for electronic nanodevices and sensors.