We report herein the discovery of methylamine (CH3NH2) induced defect-healing (MIDH) of CH3NH3PbI3 perovskite thin films based on their ultrafast (seconds), reversible chemical reaction with CH3NH2 gas at room temperature. The key to this healing behavior is the formation and spreading of an intermediate CH3NH3PbI3⋅xCH3NH2 liquid phase during this unusual perovskite-gas interaction. We demonstrate the versatility and scalability of the MIDH process, and show dramatic enhancement in the performance of perovskite solar cells (PSCs) with MIDH. This study represents a new direction in the formation of defect-free films of hybrid perovskites.

A new nearly cubic NH 2 CHNH 2 PbI 3 (FAPbI 3 ) perovskite was synthesized for the mesoscopic solar cells. The measured band gap of bulk FAPbI 3 is 1.43 eV and it is therefore potentially superior than the CH 3 NH 3 PbI 3 (MAPbI 3 ) as the light harvester. A homogeneous FAPbI 3 perovskite layer was deposited on the TiO 2 surface by utilizing the in situ dipping technology. As a result, a high efficiency of 7.5% was achieved using P3HT as the hole transport material. The nearly cubic crystal structure and appropriate band gap render this new FAPbI 3 perovskite extremely attractive for next generation high-efficiency low-cost solar cells.

We present the synthesis and characterization of a fused-ring compound, dithieno[2,3-d:2',3'-d']thieno[3,2-b:4,5-b']dithiophene (pentathienoacene, PTA). In contrast to pentacene, PTA has a larger band gap than most semiconductors used in organic field-effect transistors (OFETs) and therefore is expected to be stable in air. The large pi-conjugated and planar molecular structure of PTA would also form higher molecular orders that are conductive for carrier transport. X-ray diffraction and atomic force microscopy experiments on its films show that the molecules stack in layers with their long axis upright from the surface. X-ray photoelectron spectroscopy suggests that there are no chemical bonds at the PTA/Au interface. OFETs based on the PTA have been constructed, and their performances as p-type semiconductors are also presented. A high mobility of 0.045 cm(2)/V s and an on/off ratio of 10(3) for a PTA OFET have been achieved, demonstrating the potential of PTA for application in future organic electronics.