Active metasurfaces composed of electrically reconfigurable nanoscale subwavelength antenna arrays can enable real-time control of scattered light amplitude and phase. Achievement of widely tunable phase and amplitude in chip-based active metasurfaces operating at or near 1550 nm wavelength has considerable potential for active beam steering, dynamic hologram rendition, and realization of flat optics with reconfigurable focal lengths. Previously, electrically tunable conducting oxide-based reflectarray metasurfaces have demonstrated dynamic phase control of reflected light with a maximum phase shift of 184° ( Nano Lett. 2016 , 16 , 5319 ). Here, we introduce a dual-gated reflectarray metasurface architecture that enables much wider (>300°) phase tunability. We explore light-matter interactions with dual-gated metasurface elements that incorporate two independent voltage-controlled MOS field effect channels connected in series to form a single metasurface element that enables wider phase tunability. Using indium tin oxide (ITO) as the active metasurface material and a composite hafnia/alumina gate dielectric, we demonstrate a prototype dual-gated metasurface with a continuous phase shift from 0 to 303° and a relative reflectance modulation of 89% under applied voltage bias of 6.5 V.

Shaping the flow of light at the nanoscale has been a grand challenge for nanophotonics over decades. It is now widely recognized that metasurfaces represent a chip-scale nanophotonics array technology capable of comprehensively controlling the wavefront of light via appropriately configuring subwavelength antenna elements. Here, we demonstrate a reconfigurable metasurface that is multifunctional, i.e., notionally capable of providing diverse optical functions in the telecommunication wavelength regime, using a single compact, lightweight, electronically-controlled array with no moving parts. By electro-optical control of the phase of the scattered light from each identical individual metasurface element in an array, we demonstrate a single prototype multifunctional programmable metasurface that is capable of both dynamic beam steering and reconfigurable light focusing. Reconfigurable multifunctional metasurfaces with arrays of tunable optical antennas thus can perform arbitrary optical functions by programmable array-level control of scattered light phase, amplitude, and polarization, similar to dynamic and programmable memories in electronics.

We report a dynamically tunable reflectarray metasurface that continuously modulates the phase of reflected light in the near-infrared wavelength range under active electrical control of the phase transition from semiconducting to semimetallic states. We integrate a vanadium dioxide (VO 2) active layer into the dielectric gap of antenna elements in a reflectarray metasurface, which undergoes an insulator-to-metal transition upon resistive heating of the metallic patch antenna. The induced phase transition in the VO 2 film strongly perturbs the magnetic dipole resonance supported by the metasurface. By carefully controlling the volume fractions of coexisting metallic and dielectric regions of the VO 2 film, we observe a continuous shift of the phase of the reflected light, with a maximal achievable phase shift as high as 250°. We also observe a reflectance modulation of 23.5% as well as a spectral shift of the resonance position by 175 nm. The metasurface phase modulation is fairly broadband, yielding large phase shifts at multiple operation wavelengths.

Tunable metasurfaces enable dynamical control of the key constitutive properties of light at a subwavelength scale. To date, electrically tunable metasurfaces at near-infrared wavelengths have been realized using free carrier modulation, and switching of thermo-optical, liquid crystal and phase change media. However, the highest performance and lowest loss discrete optoelectronic modulators exploit the electro-optic effect in multiple-quantum-well heterostructures. Here, we report an all-dielectric active metasurface based on electro-optically tunable III–V multiple-quantum-wells patterned into subwavelength elements that each supports a hybrid Mie-guided mode resonance. The quantum-confined Stark effect actively modulates this volumetric hybrid resonance, and we observe a relative reflectance modulation of 270% and a phase shift from 0° to ~70°. Additionally, we demonstrate beam steering by applying an electrical bias to each element to actively change the metasurface period, an approach that can also realize tunable metalenses, active polarizers, and flat spatial light modulators.

We propose an electrically tunable metasurface, which can achieve relatively large phase modulation in both reflection and transmission modes (dual-mode operation). By integration of an ultrathin layer of indium tin oxide (ITO) as an electro-optically tunable material into a semiconductor-insulator-semiconductor (SIS) unit cell, we report an approach for active tuning of all-dielectric metasurfaces. The proposed controllable dual-mode metasurface includes an array of silicon (Si) nanodisks connected together via Si nanobars. These are placed on top of alumina and ITO layers, followed by a Si slab and a silica substrate. The required optical resonances are separately excited by Si nanobars in reflection and Si nanodisks in transmission, enabling highly confined electromagnetic fields at the ITO-alumina interface. Modulation of charge carrier concentration and refractive index in the ITO accumulation layer by varying the applied bias voltage leads to 240° of phase agility at an operating wavelength of 1696 nm for the reflected transverse electric (TE)-polarized beam and 270° of phase shift at 1563 nm for the transmitted transverse magnetic (TM)-polarized light. Independent and isolated control of the reflection and transmission modes enables distinctly different functions to be achieved for each operation mode. A rigorous coupled electrical and optical model is employed to characterize the carrier distributions in ITO and Si under applied bias and to accurately assess the voltage-dependent effects of inhomogeneous carrier profiles on the optical behavior of a unit cell.