Two‐dimensional heterostructures are generally extremely sensitive to perturbations due to the large surface–volume ratio. A widely used non‐destructive experimental technique to characterize these perturbations is the Raman spectroscopy. However, vibrational frequencies of monolayer MoS2 is proven to be non‐sensitive to perturbations such as strain and doping. In order to characterize the effect of these perturbations to the spectra we compute the frequencies and Raman intensities of monolayer MoS2 on the ab initio level. In agreement with previous experimental works, we show that the frequencies of the Raman active peaks (A1′ and E′) are rather non‐sensitive to strain or doping. On the other hand, we demonstrate that the intensity ratio depends strongly on the strain − thus it can be used as a supplementary method to characterize strain in the samples.
MoS 2 single layers are valued for their sizeable direct bandgap at the heart of the envisaged electronic and optoelectronic applications. Here we experimentally demonstrate that moderate strain values (~2%) can already trigger an indirect bandgap transition and induce a finite charge carrier density in 2D MoS 2 layers. A conclusive proof of the direct-to-indirect bandgap transition is provided by directly comparing the electronic and optical bandgaps of strained MoS 2 single layers obtained from tunneling spectroscopy and photoluminescence measurements of MoS 2 nanobubbles. Upon 2% biaxial tensile strain, the electronic gap becomes significantly smaller (1.45 ± 0.15 eV) than the optical direct gap (1.73 ± 0.1 eV), clearly evidencing a strain-induced direct to indirect bandgap transition. Moreover, the Fermi level can shift inside the conduction band already in moderately strained (~2%) MoS 2 single layers conferring them a metallic character.
Graphene nanoribbons with sub-nanometer widths are extremely interesting for nanoscale electronics and devices as they combine the unusual transport properties of graphene with the opening of a band gap due to quantum confinement in the lateral dimension. Strong research efforts are presently paid to grow such nanoribbons. Here we show the synthesis of 6-and 7-armchair graphene nanoribbons, with widths of 0.61 and 0.74 nm, and excitonic gaps of 1.83 and 2.18 eV, by high-temperature vacuum annealing of ferrocene molecules inside single-walled carbon nanotubes. The growth of the so-obtained graphene nanoribbons is evidenced from atomic resolution electron microscopy, while their welldefined structure is identified by a combination of an extensive wavelength-dependent Raman scattering characterization and quantum-chemical calculations. These findings enable a facile and scalable approach leading to the controlled growth and detailed analysis of well-defined sub-nanometer graphene nanoribbons.
Patterning graphene into various mesoscopic devices such as nanoribbons, quantum dots, etc. by lithographic techniques has enabled the guiding and manipulation of graphene’s Dirac-type charge carriers. Graphene, with well-defined strain patterns, holds promise of similarly rich physics while avoiding the problems created by the hard to control edge configuration of lithographically prepared devices. To engineer the properties of graphene via mechanical deformation, versatile new techniques are needed to pattern strain profiles in a controlled manner. Here we present a process by which strain can be created in substrate supported graphene layers. Our atomic force microscope-based technique opens up new possibilities in tailoring the properties of graphene using mechanical strain.
Quantum spin Hall (QSH) insulators host edge states, where the helical locking of spin and momentum suppresses backscattering of charge carriers, promising applications from low-power electronics to quantum computing. A major challenge for applications is the identification of large gap QSH materials, which would enable room temperature dissipationless transport in their edge states. Here we show that the layered mineral jacutingaite (Pt2HgSe3) is a candidate QSH material, realizing the long sought-after Kane–Mele insulator. Using scanning tunneling microscopy, we measure a band gap in excess of 100 meV and identify the hallmark edge states. By calculating the invariant, we confirm the topological nature of the gap. Jacutingaite is stable in air, and we demonstrate exfoliation down to at least two layers and show that it can be integrated into heterostructures with other two-dimensional materials. This adds a topological insulator to the 2D quantum material library.
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