Parasitic two-level tunnelling systems originating from structural material defects affect the functionality of various microfabricated devices by acting as a source of noise. In particular, superconducting quantum bits may be sensitive to even single defects when these reside in the tunnel barrier of the qubit’s Josephson junctions, and this can be exploited to observe and manipulate the quantum states of individual tunnelling systems. Here, we detect and fully characterize a system of two strongly interacting defects using a novel technique for high-resolution spectroscopy. Mutual defect coupling has been conjectured to explain various anomalies of glasses, and was recently suggested as the origin of low-frequency noise in superconducting devices. Our study provides conclusive evidence of defect interactions with full access to the individual constituents, demonstrating the potential of superconducting qubits for studying material defects. All our observations are consistent with the assumption that defects are generated by atomic tunnelling.

In structurally disordered solids, some atoms or small groups of atoms are able to quantum mechanically tunnel between two nearly equivalent sites. These atomic tunneling systems have been identified as the cause of various low-temperature anomalies of bulk glasses and as a source of decoherence of superconducting qubits where they are sparsely present in the disordered oxide barrier of Josephson junctions. We demonstrated experimentally that minute deformation of the oxide barrier changes the energies of the atomic tunneling systems, and we measured these changes by microwave spectroscopy of the superconducting qubit through coherent interactions between these two quantum systems. By measuring the dependence of the energy splitting of atomic tunneling states on external strain, we verify a central hypothesis of the two-level tunneling model for disordered solids.

Superconducting integrated circuits have demonstrated a tremendous potential to realize integrated quantum computing processors. However, the downside of the solid-state approach is that superconducting qubits suffer strongly from energy dissipation and environmental fluctuations caused by atomic-scale defects in device materials. Further progress towards upscaled quantum processors will require improvements in device fabrication techniques which need to be guided by novel analysis methods to understand and prevent mechanisms of defect formation. Here, we present a technique to analyse individual defects in superconducting qubits by tuning them with applied electric fields. This provides a spectroscopy method to extract the defects' energy distribution, electric dipole moments, and coherence times. Moreover, it enables one to distinguish defects residing in Josephson junction tunnel barriers from those at circuit interfaces. We find that defects at circuit interfaces are responsible for about 60% of the dielectric loss in the investigated transmon qubit sample. About 40% of all detected defects are contained in the tunnel barriers of the large-area parasitic Josephson junctions that occur collaterally in shadow evaporation, and only ≈ 3% are identified as strongly coupled defects which presumably reside in the small-area qubit tunnel junctions. The demonstrated technique provides a valuable tool to assess the decoherence sources related to circuit interfaces and to tunnel junctions that is readily applicable to standard qubit samples.

Recent progress with microfabricated quantum devices has revealed that an ubiquitous source of noise originates in tunneling material defects that give rise to a sparse bath of parasitic two-level systems (TLSs). For superconducting qubits, TLSs residing on electrode surfaces and in tunnel junctions account for a major part of decoherence and thus pose a serious roadblock to the realization of solid-state quantum processors. Here, we utilize a superconducting qubit to explore the quantum state evolution of coherently operated TLSs in order to shed new light on their individual properties and environmental interactions. We identify a frequency-dependence of TLS energy relaxation rates that can be explained by a coupling to phononic modes rather than by anticipated mutual TLS interactions. Most investigated TLSs are found to be free of pure dephasing at their energy degeneracy points, around which their Ramsey and spin-echo dephasing rates scale linearly and quadratically with asymmetry energy, respectively. We provide an explanation based on the standard tunneling model, and identify interaction with incoherent low-frequency (thermal) TLSs as the major mechanism of the pure dephasing in coherent high-frequency TLS.