Two-dimensional crystals with a wealth of exotic dimensional-dependent properties are promising candidates for next-generation ultrathin and flexible optoelectronic devices. For the first time, we demonstrate that few-layered InSe photodetectors, fabricated on both a rigid SiO2/Si substrate and a flexible polyethylene terephthalate (PET) film, are capable of conducting broadband photodetection from the visible to near-infrared region (450-785 nm) with high photoresponsivities of up to 12.3 AW(-1) at 450 nm (on SiO2/Si) and 3.9 AW(-1) at 633 nm (on PET). These photoresponsivities are superior to those of other recently reported two-dimensional (2D) crystal-based (graphene, MoS2, GaS, and GaSe) photodetectors. The InSe devices fabricated on rigid SiO2/Si substrates possess a response time of ∼50 ms and exhibit long-term stability in photoswitching. These InSe devices can also operate on a flexible substrate with or without bending and reveal comparable performance to those devices on SiO2/Si. With these excellent optoelectronic merits, we envision that the nanoscale InSe layers will not only find applications in flexible optoelectronics but also act as an active component to configure versatile 2D heterostructure devices.

The topology of the electronic structure of a crystal is manifested in its surface states. Recently, a distinct topological state has been proposed in metals or semimetals whose spin-orbit band structure features three-dimensional Dirac quasiparticles. We used angle-resolved photoemission spectroscopy to experimentally observe a pair of spin-polarized Fermi arc surface states on the surface of the Dirac semimetal Na3Bi at its native chemical potential. Our systematic results collectively identify a topological phase in a gapless material. The observed Fermi arc surface states open research frontiers in fundamental physics and possibly in spintronics.

Organic-inorganic hybrid two-dimensional (2D) perovskites have recently attracted great attention in optical and optoelectronic applications due to their inherent natural quantum-well structure. We report the growth of high-quality millimeter-sized single crystals belonging to homologous two-dimensional (2D) hybrid organic-inorganic Ruddelsden-Popper perovskites (RPPs) of (BA)(MA) PbI ( n = 1, 2, and 3) by a slow evaporation at a constant-temperature (SECT) solution-growth strategy. The as-grown 2D hybrid perovskite single crystals exhibit excellent crystallinity, phase purity, and spectral uniformity. Low-threshold lasing behaviors with different emission wavelengths at room temperature have been observed from the homologous 2D hybrid RPP single crystals. Our result demonstrates that solution-growth homologous organic-inorganic hybrid 2D perovskite single crystals open up a new window as a promising candidate for optical gain media.

In this paper, we report the optoelectronic properties of multi-layered GeS nanosheet (∼28 nm thick)-based field-effect transistors (called GeS-FETs). The multi-layered GeS-FETs exhibit remarkably high photoresponsivity of Rλ ∼ 206 A W(-1) under 1.5 μW cm(-2) illumination at λ = 633 nm, Vg = 0 V, and Vds = 10 V. The obtained Rλ ∼ 206 A W(-1) is excellent as compared with a GeS nanoribbon-based and the other family members of group IV-VI-based photodetectors in the layered-materials realm, such as GeSe and SnS2. The gate-dependent photoresponsivity of GeS-FETs was further measured to be able to reach Rλ ∼ 655 A W(-1) operated at Vg = -80 V. Moreover, the multi-layered GeS photodetector holds high external quantum efficiency (EQE ∼ 4.0 × 10(4)%) and specific detectivity (D* ∼ 2.35 × 10(13) Jones). The measured D* is comparable to those of the advanced commercial Si- and InGaAs-based photodiodes. The GeS photodetector also shows an excellent long-term photoswitching stability over a long period of operation (>1 h). These extraordinary properties of high photocurrent generation, broad spectral range, and long-term stability make the GeS-FET photodetector a highly qualified candidate for future optoelectronic applications.

In this Letter, we report measurements of the coupling between Dirac fermion quasiparticles (DFQs) and phonons on the (001) surface of the strong topological insulator Bi2Se3. While most contemporary investigations of this coupling have involved examining the temperature dependence of the DFQ self-energy via angle-resolved photoemission spectroscopy measurements, we employ inelastic helium-atom scattering to explore, for the first time, this coupling from the phonon perspective. Using a Hilbert transform, we are able to obtain the imaginary part of the phonon self-energy associated with a dispersive surface-phonon branch identified in our previous work [Phys. Rev. Lett. 107, 186102 (2011)] as having strong interactions with the DFQs. From this imaginary part of the self-energy we obtain a branch-specific electron-phonon coupling constant of 0.43, which is stronger than the values reported from the angle-resolved photoemission spectroscopy measurements.

*When the energy eigenvalues of two coupled quantum states approach each other in a certain parameter space, their energy levels repel each other and level crossing is avoided 1 . Such level repulsion, or avoided level crossing, is commonly used to describe the dispersion relation of quasiparticles in solids 2 . However, little is known about the level repulsion when more than two quasiparticles are present; for example, in a strongly interacting quantum system where a quasiparticle can spontaneously decay into a many-particle continuum [3][4][5] . Here we show that even in this case level repulsion exists between a long-lived quasiparticle state and a continuum. In our fine-resolution neutron spectroscopy study of magnetic quasiparticles in the frustrated quantum magnet BiCu 2 PO 6 , we observe a renormalization of the quasiparticle dispersion relation due to the presence of the continuum of multi-quasiparticle states.A fundamental concept in condensed matter physics is the idea that strongly interacting atomic systems can be treated as a collection of weakly interacting and long-lived quasiparticles. Within a quasiparticle picture, complex collective excited states in a many-body system are described in terms of effective elementary excitations. The quanta of these excitations carry a definite momentum and energy, and are termed quasiparticles. Magnetic insulators containing localized S = 1/2 magnetic moments and having valence-bond solid ground states are ideal systems in which to study bosonic quasiparticles in an interacting quantum many-body system 6 . The elementary magnetic excitations in these materials are triply degenerate S = 1 quasiparticles called triplons, and their momentum-and energy-resolved dynamics can be probed directly though inelastic neutron scattering (INS) measurements.In particular, when the system's Hamiltonian has an interaction term coupling single-particle and multi-particle states, the single quasiparticles may decay into the continuum of multi-particle states 3,4 . In such a system, the Hamiltonian for the single quasiparticles is non-Hermitian and the energy eigenvalues are in general complex. The single-particle decay typically occurs in two ways. Often the single-particle mode stays as a resonance inside the continuum, but the lifetime becomes short and the mode is highly damped 3 . Sometimes the single quasiparticle simply ceases to exist, and the dispersion abruptly terminates when it crosses the continuum boundary 5 . However, there is a third possibility, in which the single-quasiparticle dispersion is significantly renormalized to avoid the multi-particle continuum. This is analogous to the wellknown avoided level crossing behaviour of coupled modes, but in the complex plane of energy eigenvalues 7 . Despite broad interest in strongly interacting quantum systems, experimentally realizing an ideal condition to study the interaction between a quasiparticle and a multi-particle continuum turns out to be extremely difficult. One realization occurs in semiconducting quantum do...

Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their performance. The devices showed anisotropic inplane conductance and room temperature field effect mobilities ∼5-10 cm V s. However, the devices showed an ON-OFF ratio ∼10 at room temperature due to appreciable OFF state conductance. The weak gate tuning behavior and finite OFF state conductance in the depletion regime of SnS devices are explained by the finite carrier screening length effect which causes the existence of a conductive surface layer from defect induced holes in SnS. Through etching and n-type surface doping by CsCO to reduce/compensate the not-gatable holes near the SnS flake's top surface, the devices exhibited an order of magnitude improvement in the ON-OFF ratio, and a hole Hall mobility of ∼100 cm V s at room temperature is observed. This work suggests that in order to obtain effective switching and low OFF state power consumption, two-dimensional (2D) semiconductor based depletion mode FETs should limit their thickness to within the Debye screening length of the carriers in the semiconductor.

We employ inelastic helium atom-surface scattering to measure the low-energy phonon dispersion along high-symmetry directions on the surface of the topological insulator Bi2Te3. Results indicate that one particular low-frequency branch experiences noticeable mode softening attributable to the interaction between Dirac fermion quasiparticles and phonons on the surface. This mode softening constitutes a renormalization of the real part of the phonon self-energy. We obtain the imaginary part, and hence lifetime information, via a Hilbert transform. In doing so we are able to calculate an average branch specific electron-phonon coupling constant λν = 1.44.