We report the first demonstration
of flexible white phosphor-converted
light emitting diodes (LEDs) based on p–n junction core/shell
nitride nanowires. GaN nanowires containing seven radial In0.2Ga0.8N/GaN quantum wells were grown by metal–organic
chemical vapor deposition on a sapphire substrate by a catalyst-free
approach. To fabricate the flexible LED, the nanowires are embedded
into a phosphor-doped polymer matrix, peeled off from the growth substrate,
and contacted using a flexible and transparent silver nanowire mesh.
The electroluminescence of a flexible device presents a cool-white
color with a spectral distribution covering a broad spectral range
from 400 to 700 nm. Mechanical bending stress down to a curvature
radius of 5 mm does not yield any degradation of the LED performance.
The maximal measured external quantum efficiency of the white LED
is 9.3%, and the wall plug efficiency is 2.4%.
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