International audienceThermal imaging of individual silicon nanowires (Si NWs) is carried out by a scanning thermal microscopy (SThM) technique. The vertically aligned 1.7 (micro)m long Si NWs are fabricated combining nanosphere lithography and metal-induced wet chemical etching. A thermal model for the SThM probe is then presented with two steps: a model out of contact which enables a calibration of the probe, and a model in contact to extract thermal parameters from the sample under study. Using this model and the experimental thermal images, we finally determine a mean value of the tip-to-sample thermal contact resistance and a mean value of the Si NWs thermal conductivity. No significant thermal conductivity reduction in comparison with bulk Si is observed for Si NWs with diameters ranging from 200 to 380 nm. However, the technique presented here is currently the only one available to perform thermal measurements simultaneously on an assembly of individual one-dimensional nanostructures. It enables to save time and to make a statistical processing of the thermal data in order to deduce a reliable mean thermal conductivity, even when the tip-to-sample thermal contact resistance cannot be considered neither negligible in comparison with the Si NW intrinsic thermal resistance nor constant from one Si NW to another

Odd electron diffraction patterns (EDPs) have been obtained by transmission electron microscopy (TEM) on silicon nanowires grown via the vapour-liquidsolid method and on silicon thin films deposited by electron beam evaporation. Many explanations have been given in the past, without consensus among the scientific community: size artifacts, twinning artifacts or, more widely accepted, the existence of new hexagonal Si phases. In order to resolve this issue, the microstructures of Si nanowires and Si thin films have been characterized by TEM, high-resolution transmission electron microscopy (HRTEM) and highresolution scanning transmission electron microscopy. Despite the differences in the geometries and elaboration processes, the EDPs of the materials show great similarities. The different hypotheses reported in the literature have been investigated. It was found that the positions of the diffraction spots in the EDPs could be reproduced by simulating a hexagonal structure with c/a = 12(2/3) 1/2 , but the intensities in many EDPs remained unexplained. Finally, it was established that all the experimental data, i.e. EDPs and HRTEM images, agree with a classical cubic silicon structure containing two microstructural defects: (i) overlapping AE3 microtwins which induce extra spots by double diffraction, and (ii) nanotwins which induce extra spots as a result of streaking effects. It is concluded that there is no hexagonal phase in the Si nanowires and the Si thin films presented in this work.

International audienceThe increasingly demand on secondary batteries with higher specific energy densities requires the replace- ment of the actual electrode materials. With a very high theoretical capacity (4200 mAh g−1 ) at low voltage, silicon is presented as a very interesting potential candidate as negative electrode for lithium-ion micro- batteries. For the first time, the electrochemical lithium alloying/de-alloying process is proven to occur, respectively, at 0.15 V/0.45 V vs. Li+ /Li with Si nanowires (SiNWs, 200-300 nm in diameter) synthesized by chemical vapour deposition. This new three-dimensional architecture material is well suited to accom- modate the expected large volume expansion due to the reversible formation of Li-Si alloys. At present, stable capacity over ten to twenty cycles is demonstrated. The storage capacity is shown to increase with the growth temperature by a factor 3 as the temperature varies from 525 to 575 ◦ C. These results, showing an attractive working potential and large storage capacities, open up a new promising field of research