Traveling a long way past the junction Diodes are central components of modern electronic circuits. They essentially consist of two semiconductors sandwiched together, with one deficient in electrons (p), the other enriched (n). Najafi et al. used ultrafast electron microscopy to study the dynamics in a silicon diode on a time scale of trillionths of a second. They discovered that when light excites the diode's charge carriers, those carriers migrate much farther past the p-n junction than standard models would imply. The authors explain the results using a ballistic transport model. Science , this issue p. 164

The ultrafast spatial and temporal dynamics of excited carriers are important to understanding the response of materials to laser pulses. Here we use scanning ultrafast electron microscopy to image the dynamics of electrons and holes in silicon after excitation with a short laser pulse. We find that the carriers exhibit a diffusive dynamics at times shorter than 200 ps, with a transient diffusivity up to 1,000 times higher than the room temperature value, D0≈30 cm2s−1. The diffusivity then decreases rapidly, reaching a value of D0 roughly 500 ps after the excitation pulse. We attribute the transient super-diffusive behaviour to the rapid expansion of the excited carrier gas, which equilibrates with the environment in 100−150 ps. Numerical solution of the diffusion equation, as well as ab initio calculations, support our interpretation. Our findings provide new insight into the ultrafast spatial dynamics of excited carriers in materials.

The polarization dependence (linear dichroism) of the C 1s X-ray absorption spectrum of individual multi-walled carbon nanotubes (MWCNTs) is measured using scanning transmission X-ray microscopy. A very strong dichroic effect is found in the C 1s --> pi* transition, with almost complete disappearance of this transition when the electric-field (E)-vector is aligned parallel to high-quality (low-defect) MWCNTs and maximum intensity when the E-vector is orthogonal to the tube axis. In contrast, there is very little dichroism in the C 1s --> sigma* transitions. The origin of this polarization effect is explained. The magnitude of the polarization dependence is found to differ in MWCNTs synthesized by different methods (arc discharge versus chemical vapor deposition). This is ascribed to differences in densities of sp(2)-type defects. The potential for use of this signal to characterize defects in single-carbon-nanotube devices is discussed.

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