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Structural transition in II-VI nanofilms: Effect of molar ratio on structural, morphological, and optical properties J. Appl. Phys. 111, 113510 (2012) Emission from a dipole-forbidden energy state in a ZnO quantum dot induced by a near-field interaction with a fiber probe Appl. Phys. Lett. 100, 223110 (2012) Effect of Lorentz local field for optical second order nonlinear susceptibility in ZnO nanorod J. Appl. Phys. 111, 103112 (2012) A comparative study of ultraviolet photoconductivity relaxation in zinc oxide (ZnO) thin films deposited by different techniques J. Appl. Phys. 111, 102809 (2012) Additional information on J. Appl. Phys. We study photoluminescence ͑PL͒ of ZnO-opal structures excited by a 351.1 nm laser line. The structures were fabricated by infiltration of ZnO from an aqueous solution of zinc nitrate into opal matrices. The emission spectrum of thick ZnO layers grown on the surface of bulk opals exhibits narrow PL bands associated with the recombination of bound and free-excitons. The free-exciton lines are discussed taking into account the polariton phenomena. The width of the excitonic lines ͑2-3 meV͒ along with their energy position is indicative of high quality and strain-free state of the layer. The emission from ZnO crystallites embedded into bulk opal is dominated by near band gap luminescence, a weak quantum confinement effect being observed for crystallites with sizes around 50 nm. Thin ZnO films grown on single-layer opals exhibit enhanced resonant Raman scattering, phonon confinement effects, and surface-related modes. Strong exciton-LO phonon and exciton-Fröhlich mode coupling in ZnO nanostructures is deduced from the analysis of multiphonon excitonic resonant Raman scattering.

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The emission from ZnO layers grown on the surface of bulk opals using chemical deposition is studied under excitation by the 351.1 nm line of an Ar + laser at different excitation power densities and temperatures. The emission spectrum exhibits narrow photoluminescence (PL) bands associated with the recombination of bound and free excitons as well a relatively broad band around 3.31 eV. The width of the excitonic lines (2-3 meV) along with their energy position are indicative of the high quality and strain-free state of the layer. The origin of the 3.31 eV PL band is discussed in connection with its dependence upon the excitation power density and temperature.

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