No abstract

High-efficiency multijunction or tandem solar cells based on group III–V semiconductor alloys are applied in a rapidly expanding range of space and terrestrial programs. Resistance to high-energy radiation damage is an essential feature of such cells as they power most satellites, including those used for communications, defense, and scientific research. Recently we have shown that the energy gap of In1−xGaxN alloys potentially can be continuously varied from 0.7 to 3.4 eV, providing a full-solar-spectrum material system for multijunction solar cells. We find that the optical and electronic properties of these alloys exhibit a much higher resistance to high-energy (2 MeV) proton irradiation than the standard currently used photovoltaic materials such as GaAs and GaInP, and therefore offer great potential for radiation-hard high-efficiency solar cells for space applications. The observed insensitivity of the semiconductor characteristics to the radiation damage is explained by the location of the band edges relative to the average dangling bond defect energy represented by the Fermi level stabilization energy in In1−xGaxN alloys.

Corresponding author exist scenarios in which the effective Majorana mass of the electron neutrino could be larger than 0.05 eV. Recent developments in detector technology make the observation of 0 νββ decay at this scale now feasible. For recent comprehensive experimental and theoretical reviews see [4][5][6]. Optimism that a direct observation of 0 νββ decay is possible was greatly enhanced by the observation and measurement of the oscillations of atmospheric neutrinos [7], the confirmation by SuperKamiokande [8] of the deficit of 8 B neutrinos observed by the chlorine experiment [9], the observed deficit of p-p neutrinos by SAGE [10] and GALEX [11], and the results of the SNO experiment [12] that clearly showed that the total flux of 8 B neutrinos from the sun predicted by Bahcall and his coworkers [13] is correct. Finally, the data from the KamLAND