Thin-film field-effect transistor is a fundamental component behind various mordern electronics. The development of stretchable electronics poses fundamental challenges in developing new electronic materials for stretchable thin-film transistors that are mechanically compliant and solution processable. Here we report the fabrication of transparent thin-film transistors that behave like an elastomer film. The entire fabrication is carried out by solution-based techniques, and the resulting devices exhibit a mobility of ∼30 cm2 V−1 s−1, on/off ratio of 103–104, switching current >100 μA, transconductance >50 μS and relative low operating voltages. The devices can be stretched by up to 50% strain and subjected to 500 cycles of repeated stretching to 20% strain without significant loss in electrical property. The thin-film transistors are also used to drive organic light-emitting diodes. The approach and results represent an important progress toward the development of stretchable active-matrix displays.

The performance of a fl exible transparent conductive electrode with extremely smooth topography capable of withstanding thermal processing at 300 °C for at least 6 h with little change in sheet resistance and optical clarity is reported. In depth investigation is performed on atomic layer deposition (ALD) deposited ZnO on Ag nanowires (NWs) with regard to thermal and atmospheric corrosion stability. The ZnO coated nanowire networks are embedded within the surface of a polyimide matrix, and the <2 nm roughness freestanding electrode is used to fabricate a white polymer light emitting diode (PLED). PLEDs obtained using the ZnO-AgNW-polyimide substrate exhibit comparable performance to indium tin oxide (ITO)/glass based devices, verifying its efficacy for use in optoelectronic devices requiring high processing temperatures.

Highly flexible and efficient CH3NH3PbBr3 quantum dot based light-emitting diodes were developed on a silver nanowire–polymer composite electrode.