In this Letter, the self-rectifying resistive switching (RS) behavior is demonstrated in Ti/ZrN/Pt/p-Si resistive random access memory (RRAM) devices. Compared to an RS characteristic of the conventional Ti/ZrN/Pt structures, the memory cell with a p-Si bottom layer shows a larger current ratio. However, a current-limited region is also more clearly obtained in a low voltage region, which can result in one diode-type RRAM with self-selecting properties. Consequently, these results infer that the proposed ZrN-based RRAM cells with a Pt/p-Si selector warrant the realization of the self-selecting RRAM cell without any additional peripheral elements to suppress a disturbance in the reading operation.

Oxygen (O 2 ) sensing in trace amounts and mixed gas is essential in many types of industries. Semiconductor sensors have proven to be invaluable tools for the O 2 measurements in a wide concentration range, but the sensors are only able to quantify O 2 in a concentration range of subppm, thus far, especially in mixed gas. We present in this paper a new concept for O 2 sensing with incomparable sensitivity using IGZO-films with oxygen vacancy-based conducting filaments (CFs). O 2 sensing relies on rupturing of the CFs, and the proposed device quickly recovers to the initial state using a pulse of 0.6 V/90 μs after the sensing. The proposed device has a high sensitivity of 14 even at an O 2 concentration of 500 ppb, a detection limit of 150 ppb for O 2 at RT, and excellent selectivity for O 2 in mixed gas, which is remarkable compared to other gas sensors. The proposed device can be widely used in gas sensors especially for detecting O 2 at a low ppb level, which is due to excellent sensing characteristics.

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