Abstract. Nowadays, verification of digital integrated circuit has been focused more and more from the timing and area field to current and power estimations. The main problem with this kind of verification is on the lack of precision of current estimations when working at higher levels (logic, RT, architectural levels). To solve this problem it is not only necessary to use good current models for switching activity but, also, it is necessary to calculate this switching activity with high accuracy. In this paper we present an alternative to estimate current consumption using logic-level simulation. To do that, we use a simple but accurate enough current model to calculate the current consumption for each signal transition, and a delay model that obtains high accuracy when it is used to measure the switching activity (the Degradation Delay Model -DDM-). In the paper we present the current model for CMOS inverter, the characterization process and the model implementation in the logic simulator HALOTIS that includes the DDM. Results show a high accuracy in the estimation of current curves when compared to HSPICE, and a potentially large improvement over conventional approaches.
Abstract. In this paper, we present a model, Internode, that unifies the gate functional behavior and the dynamic one. It is based on a FSM that represents the internal state of the gate depending on the electrical load of its internal nodes allowing to consider aspects like input collisions and internal power consumption. Also, we explain the importance of internal power consumption (such effect occurs when an input transition does not affect the output) in three different technologies (AMS 0.6 µm, AMS 0.35 µm, and UMC 130 nm). This consumption becomes more remarkable as technology advances yielding to underestimating up to 9.4% of global power consumption in the UMC 130 nm case. Finally, we show how to optimize power estimation in the SCMOS NOR-2 gate by applying Internode to modeling its consumption accurately. 1
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