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Perovskite light‐emitting diodes (PeLEDs) are promising technologies for advanced display and lighting source applications. Alongside tremendous efforts to improve efficiency, developing flexible devices could potentially enable PeLEDs compatible with wearable, foldable, bio‐integrated, and other intriguing functionalities. However, the flexible PeLEDs currently have not received enough attention. The overall performance still lags behind the rigid one, mainly attributed to the lack of mechanically stable perovskite thin films with desirable optical and electrical properties. Herein, a self‐healing strategy to achieve flexible perovskite films with improved mechanical reliability and optoelectrical properties is proposed. A multi‐functional silane molecule of (3,3,3‐trifluoropropyl) trimethoxysilane (TFPTMS) is incorporated into a perovskite precursor, which could undergo an in situ cross‐linking process and generate a flexible Si–O–Si network within the perovskite films. In addition, the reversible hydrolysis and condensation reactions and the fluorinated alkyl chains endow the perovskite films with self‐healing capability. Accordingly, the synergistic influences contribute to high‐efficiency flexible PeLEDs with an external quantum efficiency (EQE) of 16.2%. Moreover, 75% of the initial efficiency value is reserved even after 1000 bending cycles. This work paves a way to rationalize flexible perovskite thin films for various optoelectronic applications.

Extensive efforts have been made to develop wide‐bandgap metal compound‐based carrier‐selective contacts to improve the performance of crystalline silicon (c‐Si) solar cells, by mitigating the deleterious effects of metal–Si contact directly. Herein, thermally evaporated wide‐bandgap strontium oxide (SrO x ) is exploited as an electron‐selective contact for c‐Si solar cells. Benefiting from a lower work function (3.1 eV) of SrO x , a strong downward band‐bending is achieved at the n‐type c‐Si/SrO x interface, enabling the electron‐selective transport characteristic. Thin SrO x films simultaneously provide moderate surface passivation after annealing and enable a low contact resistivity on c‐Si surfaces. By the implementation of a single‐dielectric‐layer SrO x ‐based rear contact, a champion power conversion efficiency of 20.0% is realized on the n‐type c‐Si solar cell featuring an intriguing fill factor of 82.8%. Moreover, electron‐selective SrO x contact is demonstrated to show high thermal stability up to 500 °C. The SrO x layer formed by a facile thermal evaporation process presents a unique opportunity to develop highly efficient and low‐cost c‐Si solar cells.