We demonstrate a heterostructure NiS/MoS hybrid with tight interface synthesized via an improved hydrothermal method. As compared to pure MoS, the increased surface area and the shorten charge transport pathway in the layered hybrid significantly promote the photocatalytic efficiency for hydrogen evolution reaction (HER). In particularly, the optimized NiS/MoS hybrid with 20 wt % NiS exhibits the highest photocatalytic activity with HER value of 406 μmolgh, which is enhanced by 70% compared to that of pure MoS nanosheets (285.0 μmolgh). Moreover, the value is 4 times more than the commercial MoS (92.0 μmolgh), indicating the high potential of the hybrid in the catalytic fields.
Two-dimensional transition metal dichalcogenide (2D TMDs) alloys, consisting of three or more elements, offer a luxury variety of chemical and physical properties through elemental ratio alteration, thus may provide ideal candidate with tunable band gap for specific electrical applications. In this work, we demonstrate a high-quality layered MoSe2xTe2−2x (x = 0 ∼ 1) alloy synthesized via one-step chemical vapor transport method for high-performance electronic and optoelectronic transistors. Our characterizations reveal the obtained ternary alloy forming high-quality single crystal layers with 2H phase. Interestingly, the electronic transistors fabricated on MoSe2xTe2−2x thin layers (6 ∼ 7 layers) display an anomalous transition from ambipolar to n-type in conductive characteristics with the increase of substitution x value. The subsequent photoelectrical measurements exhibit that high on-off ratio for every ratio (x = 0.18, 0.38, 0.67, 0.83) with optical band gap in the range of 1.6 eV and 1.1 eV (near infrared). The optimized MoSe0.37Te1.63–based transistor can achieve up to ∼107 Ion/Ioff and 105 Iph/Idark ratio, 100 mA W−1 photo-responsivity and 2.38% external quantum efficiency with high photoresponsivity. Thus, such ternary MoSe2xTe2−2x alloys may pose a great potential for 2D-based electronic and photoelectronic applications.
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