Current-induced spin-orbit torques (SOTs) represent one of the most effective ways to manipulate the magnetization in spintronic devices. The orthogonal torquemagnetization geometry, the strong damping, and the large domain wall velocities inherent to materials with strong spin-orbit coupling make SOTs especially appealing for fast switching applications in nonvolatile memory and logic units. So far, however, the timescale and evolution of the magnetization during the switching process have remained undetected. Here, we report the direct observation of SOTdriven magnetization dynamics in Pt/Co/AlO x dots during current pulse injection.Time-resolved x-ray images with 25 nm spatial and 100 ps temporal resolution reveal that switching is achieved within the duration of a sub-ns current pulse by the fast nucleation of an inverted domain at the edge of the dot and propagation of a tilted domain wall across the dot. The nucleation point is deterministic and alternates between the four dot quadrants depending on the sign of the magnetization, current, and external field. Our measurements reveal how the magnetic symmetry is broken by the concerted action of both damping-like and field-like SOT and show that reproducible switching events can be obtained for over 10 12 reversal cycles. arXiv:1704.06402v1 [cond-mat.mtrl-sci] 21 Apr 2017Controlling the magnetic state of ultrathin heterostructures using electric currents is key to developing nonvolatile memory devices with minimal static and dynamic power consumption 1 . A promising approach for magnetic switching is based on injecting an in-plane current into a ferromagnet/heavy metal bilayer, where the spin-orbit torques (SOTs) 2,3 resulting from the spin Hall effect and interface charge-spin conversion 4-8 provide an efficient mechanism to reverse the magnetization 1,9,10,12-15 and manipulate domain walls (DWs) [16][17][18][19] .SOT switching schemes can be easily integrated into three-terminal magnetic tunnel junctions having either in-plane 10 or out-of-plane 20 magnetization. Although the threeterminal geometry is more demanding in terms of size, it offers desirable features compared to the two-terminal spin-transfer torque (STT) approach presently used in magnetic random access memories (MRAM) 21 . One such feature is the separation of the read and write current paths in the tunnel junction, which avoids electrical stress of the oxide barrier during writing and allows for independent optimization of the tunneling magnetoresistance during reading. The other crucial feature is the switching speed, which is expected to be extremely fast because the spin accumulation inducing the SOTs is orthogonal to the quiescent magnetization, leading to a negligible incubation delay. Such a delay is a major issue for STT devices, since thermal fluctuations result in a switching time distribution that is several ns wide 22,23 . Furthermore, the SOT-induced magnetization dynamics is governed by strong damping in the monodomain regime 24,25 and fast domain wall motion in the m...

The conversion of charge currents into spin currents in nonmagnetic conductors is a hallmark manifestation of spin-orbit coupling that has important implications for spintronic devices. Here we report the measurement of the interfacial spin accumulation induced by the spin Hall effect in Pt and W thin films using magneto-optical Kerr microscopy. We show that the Kerr rotation has opposite sign in Pt and W and scales linearly with current density. By comparing the experimental results with ab initio calculations of the spin Hall and magneto-optical Kerr effects, we quantitatively determine the current-induced spin accumulation at the Pt interface as 5×10^{-12}  μ_{B} A^{-1} cm^{2} per atom. From thickness-dependent measurements, we determine the spin diffusion length in a single Pt film to be 11±3  nm, which is significantly larger compared to that of Pt adjacent to a magnetic layer.

In this paper, we present a strategy to use interfacial strain in multilayer heterostructures to tune their resistive response and ionic transport as active component in an oxide-based multilayer microdot device on chip. For this, fabrication of strained multilayer microdot devices with sideways attached electrodes is reported with the material system Gd0.1Ce0.9O(2-δ)/Er2O3. The fast ionic conducting Gd0.1Ce0.9O(2-δ) single layers are altered in lattice strain by the electrically insulating erbia phases of a microdot. The strain activated volume of the Gd0.1Ce0.9O(2-δ) is investigated by changing the number of individual layers from 1 to 60 while keeping the microdot at a constant thickness; i.e., the proportion of strained volume was systematically varied. Electrical measurements showed that the activation energy of the devices could be altered by Δ0.31 eV by changing the compressive strain of a microdot ceria-based phase by more than 1.16%. The electrical conductivity data is analyzed and interpreted with a strain volume model and defect thermodynamics. Additionally, an equivalent circuit model is presented for sideways contacted multilayer microdots. We give a proof-of-concept for microdot contacting to capture real strain-ionic transport effects and reveal that for classic top-electrode contacting the effect is nil, highlighting the need for sideways electric contacting on a nanoscopic scale. The near order ionic transport interaction is supported by Raman spectroscopy measurements. These were conducted and analyzed together with fully relaxed single thin film samples. Strain states are described relative to the strain activated volumes of Gd0.1Ce0.9O(2-δ) in the microdot multilayer. These findings reveal that strain engineering in microfabricated devices allows altering the ionic conduction over a wide range beyond classic doping strategies for single films. The reported fabrication route and concept of strained multilayer microdots is a promising path for applying strained multilayer oxides as active new building blocks relevant for a broad range of microelectrochemical devices, e.g., resistive switching memory prototypes, resistive or electrochemical sensors, or as active catalytic solid state surface components for microfuel cells or all-solid-state batteries.

We report on the structure, magnetization, magnetic anisotropy, and domain morphology of ultrathin yttrium iron garnet (YIG)/Pt films with thickness ranging from 3 to 90 nm. We find that the saturation magnetization is close to the bulk value in the thickest films and decreases towards low thickness with a strong reduction below 10 nm. We characterize the magnetic anisotropy by measuring the transverse spin Hall magnetoresistance as a function of applied field. Our results reveal strong easy plane anisotropy fields of the order of 50-100 mT, which add to the demagnetizing field, as well as weaker in-plane uniaxial anisotropy ranging from 10 to 100 μT. The in-plane easy axis direction changes with thickness, but presents also significant fluctuations among samples with the same thickness grown on the same substrate. X-ray photoelectron emission microscopy reveals the formation of zigzag magnetic domains in YIG films thicker than 10 nm, which have dimensions larger than several 100 μm and are separated by achiral Néel-type domain walls. Smaller domains characterized by interspersed elongated features are found in YIG films thinner than 10 nm.

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