Monolayer van der Waals (vdW) magnets provide an exciting opportunity for exploring two-dimensional (2D) magnetism for scientific and technological advances, but the intrinsic ferromagnetism has only been observed at low temperatures. Here, we report the observation of room temperature ferromagnetism in manganese selenide (MnSe ) films grown by molecular beam epitaxy (MBE). Magnetic and structural characterization provides strong evidence that, in the monolayer limit, the ferromagnetism originates from a vdW manganese diselenide (MnSe) monolayer, while for thicker films it could originate from a combination of vdW MnSe and/or interfacial magnetism of α-MnSe(111). Magnetization measurements of monolayer MnSe films on GaSe and SnSe epilayers show ferromagnetic ordering with a large saturation magnetization of ∼4 Bohr magnetons per Mn, which is consistent with the density functional theory calculations predicting ferromagnetism in monolayer 1T-MnSe. Growing MnSe films on GaSe up to a high thickness (∼40 nm) produces α-MnSe(111) and an enhanced magnetic moment (∼2×) compared to the monolayer MnSe samples. Detailed structural characterization by scanning transmission electron microscopy (STEM), scanning tunneling microscopy (STM), and reflection high energy electron diffraction (RHEED) reveals an abrupt and clean interface between GaSe(0001) and α-MnSe(111). In particular, the structure measured by STEM is consistent with the presence of a MnSe monolayer at the interface. These results hold promise for potential applications in energy efficient information storage and processing.

We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited (CVD) MoS 2 . Niobium was found to act as an efficient acceptor up to relatively high density in MoS 2 films. For a hole density of 4 x 10 20 cm -3Hall mobility of 8.5 cm 2 V -1 s -1 was determined, which matches well with the theoretically expected values. XRD and Raman characterization indicate that the film had good out-of-plane crystalline quality. Absorption measurements showed that the doped sample had similar characteristics to high-quality undoped samples, with a clear absorption edge at 1.8 eV. This demonstration of p-doping in large area epitaxial MoS 2 could help in realizing a wide variety of electrical and opto-electronic devices based on layered metal dichalcogenides.

We report on the vapor-solid growth of single crystalline few-layer MoS2 films on (0001)-oriented sapphire with excellent structural and electrical properties over centimeter length scale. Highresolution X-ray diffraction scans indicated that the films had good out-of-plane ordering and epitaxial registry. A carrier density of ~2 x 10 11 cm -2 and a room temperature mobility of 192 cm 2 /Vs were extracted from space-charge limited transport regime in the films. The electron mobility was found to exhibit in-plane anisotropy with a ratio of ~ 1.8. Theoretical estimates of the temperature-dependent electron mobility including optical phonon, acoustic deformation potential and remote ionized impurity scattering were found to satisfactorily match the measured data. The synthesis approach reported here demonstrates the feasibility of device quality few-layer MoS2 films with excellent uniformity and high quality.

KEYWORDSMoS 2 , tunnel diode, GaN, 2D/3D heterojunction, interband tunneling.

Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) pmolybdenum disulfide/n-gallium nitride (p-MoS 2 /n-GaN) heterojunction diodes are reported.Devices were fabricated on high-quality, large-area p-MoS 2 grown by chemical vapor deposition (CVD) on hexagonal sapphire substrates. The processed devices were transferred onto GaN/sapphire substrates, and the transferred films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). On-axis XRD spectra and surface topology