In this work, high-quality 1D van der Waals (vdW) Nb 2 Pd 3 Se 8 is synthesized, showing an excellent scalability from bulk to single-ribbon due to weakly bonded repeating unit ribbons. The calculation of electronic band structures confirmed that this novel Nb 2 Pd 3 Se 8 is a semiconducting material, displaying indirect-to-direct bandgap transition with decreasing the number of unit-ribbons from bulk to single. Field effect transistors (FETs) fabricated on the mechanically exfoliated Nb 2 Pd 3 Se 8 nanowires exhibit n-type transport characteristics at room temperature, resulting in the values for the electron mobility and I on /I off ratio of 31 cm 2 V −1 s −1 and ≈10 4 , respectively. Through transport measurements at various temperatures from room temperature down to 90 K, it is confirmed that Nb 2 Pd 3 Se 8 FETs can achieve negligible Schottky barrier height (SBH) for the Au contacts at the temperature range, displaying clear ohmic contact characteristics. Furthermore, top-gated FETs fabricated with the Al 2 O 3 dielectric layer are studied simultaneously with back-gated FETs.
In this study, high‐purity and centimeter‐scale bulk Ta2Ni3Se8 crystals are obtained by controlling the growth temperature and stoichiometric ratio between tantalum, nickel, and selenium. It is demonstrated that the bulk Ta2Ni3Se8 crystals could be effectively exfoliated into a few chain‐scale nanowires through simple mechanical exfoliation and liquid‐phase exfoliation. Also, the calculation of electronic band structures confirms that Ta2Ni3Se8 is a semiconducting material with a small bandgap. A field‐effect transistor is successfully fabricated on the mechanically exfoliated Ta2Ni3Se8 nanowires. Transport measurements at room temperature reveal that Ta2Ni3Se8 nanowires exhibit ambipolar semiconducting behavior with maximum mobilities of 20.3 and 3.52 cm2 V−1 s−1 for electrons and holes, respectively. The temperature‐dependent transport measurement (from 90 to 295 K) confirms the carrier transport mechanism of Ta2Ni3Se8 nanowires. Based on these characteristics, the obtained 1D vdW material is expected to be a potential candidate for additional 1D materials as channel materials.
Recently, ternary transition metal chalcogenide Ta2X3Se8 (X = Pd or Pt) has attracted great interest as a class of emerging one-dimensional (1D) van der Waals (vdW) materials. In particular,Ta2Pd3Se8 has...
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