20-nm-thick and 50-nm-thick La 0.7 Sr 0.3 MnO 3 films were grown by molecular-beam epitaxy on Si ͑001͒ substrates overlaid by a 20-nm-thick SrTiO 3 ͑001͒ buffer layer. X-ray diffraction and atomic force microscopy studies demonstrate their epitaxial ͑001͒ orientation. Their static magnetic properties are investigated as a function of the temperature using a superconducting quantum interference device. Ferromagnetic resonance ͑FMR͒ inside a cavity and microstrip ferromagnetic resonance ͑MS-FMR͒ are used to study their dynamic properties. The field dependence of the MS-FMR resonance frequency as a function of a perpendicular applied field provides a precise evaluation of the g factor and of the effective demagnetizing field 4M ef f at room temperature. The perpendicular uniaxial and the in-plane anisotropies strongly decrease versus temperature. The excellent epitaxial crystallographic orientation due to the SrTiO 3 buffer gives rise to an observed fourfold symmetry of the in-plane anisotropy which is assumed of magnetocrystalline nature. The large perpendicular uniaxial anisotropy gives rise to an effective demagnetizing field significantly larger than the resulting one from the sole contribution of the saturation magnetization. It is most probably induced by the interfacial strain.
La 0.7 Sr 0.3 MnO 3 (LSMO) thin films (with a thickness of 10, 20, 60, 75, and 100 nm) were grown on SrTiO 3 (STO)-buffered silicon (001) substrates by reactive molecular-beam epitaxy. Xray diffraction (XRD) revealed the heterostructures to be fully epitaxial with orientation relationship (001) LSMO jj (001) STO jj (001) Si and [100] LSMO jj [100] STO jj [110] Si. Root mean square roughness was about 0.5 nm as measured by atomic force microscopy (AFM) for films of 10-75 nm thicknesses, and about 1 nm for the 100 nm thick LSMO film.Normalized Hooge parameters in the (0.95 AE 0.25) Â 10 À30 -(3.41 AE 0.71) Â 10 À30 m 3 range were measured at 300 K, which are comparable to the noise level typically measured in the best LSMO films on (001) STO substrates. Overall these very low noise LSMO films with thicknesses in the 10-100 nm range grown on STO/Si showed properties rivaling those of LSMO films deposited on (001) STO single crystal substrates, thus demonstrating their potential use for LSMO-based devices on silicon substrates.
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