Silicon is more than the dominant material in the conventional microelectronics industry: it also has potential as a host material for emerging quantum information technologies. Standard fabrication techniques already allow the isolation of single electron spins in silicon transistor-like devices. Although this is also possible in other materials, silicon-based systems have the advantage of interacting more weakly with nuclear spins. Reducing such interactions is important for the control of spin quantum bits because nuclear fluctuations limit quantum phase coherence, as seen in recent experiments in GaAs-based quantum dots. Advances in reducing nuclear decoherence effects by means of complex control still result in coherence times much shorter than those seen in experiments on large ensembles of impurity-bound electrons in bulk silicon crystals. Here we report coherent control of electron spins in two coupled quantum dots in an undoped Si/SiGe heterostructure and show that this system has a nuclei-induced dephasing time of 360 nanoseconds, which is an increase by nearly two orders of magnitude over similar measurements in GaAs-based quantum dots. The degree of phase coherence observed, combined with fast, gated electrical initialization, read-out and control, should motivate future development of silicon-based quantum information processors.

We demonstrate improved operation of exchange-coupled semiconductor quantum dots by substantially reducing the sensitivity of exchange operations to charge noise. The method involves biasing a double dot symmetrically between the charge-state anticrossings, where the derivative of the exchange energy with respect to gate voltages is minimized. Exchange remains highly tunable by adjusting the tunnel coupling. We find that this method reduces the dephasing effect of charge noise by more than a factor of 5 in comparison to operation near a charge-state anticrossing, increasing the number of observable exchange oscillations in our qubit by a similar factor. Performance also improves with exchange rate, favoring fast quantum operations. DOI: 10.1103/PhysRevLett.116.110402 Gated semiconductor quantum dots are a leading candidate for quantum information processing due to their high speed, density, and compatibility with mature fabrication technologies [1,2]. Quantum dots are formed by spatially confining individual electrons using a combination of material interfaces and nanoscale metallic gates. Although several quantized degrees of freedom are available [3][4][5], the electron spin is often employed as a qubit due to its long coherence time [6,7]. Spin-spin coupling may be controlled via the kinetic exchange interaction, which has the benefit of short range and electrical controllability. Numerous qubit proposals use exchange, including as a two-qubit gate between ESR-addressed spins [8], a single axis of control in a two dot system also employing gradient magnetic fields [9] or spin-orbit couplings [10], or as a means of full qubit control on a restricted subspace of at least three coupled spins [11][12][13]. However, since exchange relies on electron motion, it is susceptible to electric field fluctuations, or charge noise. Limiting the consequence of this noise is critical to attaining performance of exchange-based qubits adequate for quantum information processing.Charge noise in semiconductor quantum dots may originate from a variety of sources including electric defects at interfaces and in dielectrics [14]. These defects typically result in electric fields that exhibit an approximate 1=f noise spectral density. Conventional routes for reducing charge noise include improving materials and interfaces [15] and dynamical decoupling [16][17][18][19]. In this Letter, rather than addressing the microscopic origins or detailed spectrum of charge noise, we introduce a "symmetric" mode of operation where the exchange interaction is less susceptible to that noise. This is done by biasing the device to a regime where the strength of the exchange interaction is first-order insensitive to dot chemical potential fluctuations but is still controllable by modulating the interdot tunnel barrier. This dramatically reduces the effects of charge noise.The principle of symmetric operation can be understood by treating charge noise as equivalent to voltage fluctuations on confinement gates. This approximation is valid when materi...

We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm that the energetics are determined by the gate-induced electrostatic potentials. Pauli spin blockade has been observed via transport through the double dot in the two electron configuration, a critical step in performing coherent spin manipulations in Si.Comment: 4 pages, 4 figure

An electrically tuned nematic liquid-crystal (LC) infiltrated photonic crystal (PC) laser is demonstrated. This PC laser represents an emerging class of nanoscale optical adaptive devices enabled by the convergence of nonlinear optical materials, electronics, and fluidics that promise increased functionality and utility over existing technologies. A LC cell is constructed by encasing the PC laser between two indium tin oxide glass plates, which serve as the modulating electrodes. Applying a voltage across the cell realigns the LC, modifies the laser cavity's optical path length, and blueshifts the lasing wavelength.

We have demonstrated electrical tuning in ring resonators fabricated from silicon-on-insulator wafers by incorporating nematic liquid crystals ͑NLCs͒ as the waveguide top and side cladding material. Photolithographically defined electrodes aligned around the ring resonator were used to control the orientation of the NLCs to modulate the cladding refractive index and, hence, the resonant wavelengths of the ring resonator. © 2003 American Institute of Physics. ͓DOI: 10.1063/1.1630370͔Microring resonators, fabricated with conventional semiconductor processing methods in silicon, offer significant advantages over the existing telecommunication filter technology and may be the foundation of future dense-wavelengthdivision-multiplexing ͑DWDM͒ filters. 1-5The high refractive index ͑RI͒ contrast available in silicon-oninsulator ͑SOI͒ ring resonators enables low loss and high-Q filters fabricated with radii down to a few microns.6,7 Such resonators can be designed as notch filters for adding or dropping individual channels in the telecommunication bands and can be densely integrated in photonic networks. For reconfigurable DWDM systems, and to compensate for temperature changes, it is desirable to tune the precise channel frequency dropped by such resonator add/drop multiplexers.Two primary methods exist to control the optical path length of a ring resonator and thus tune its resonant frequency. To statically tune a ring resonator one can either adjust the physical dimensions ͑in particular its circumference͒ or the refractive indices of the constituent materials of the resonator. Dynamically tunable resonators provide another level of functionality over statically tuned resonators and are most practically obtained by controlling the refractive indices of the constituent materials. Dynamic tuning is commonly achieved by thermally changing the RI, traditionally by introducing a heater close to the resonator. 8 However, power dissipation may provide a serious problem in such tunable ring resonator designs, especially when many resonators have to be integrated in a DWDM multiplexing system. In this letter we demonstrate the dynamic tuning of a ring resonator by changing the RI of its cladding via the orientation of the nematic liquid crystals ͑NLC͒.The resonator system under study, as shown in Fig. 1, was fabricated from a SOI wafer with silicon thickness of 205 nm and oxide thickness of 1 m, ring radius of 5 m, and ring and waveguide widths of 500 nm. The resonator was coupled to one waveguide, which served as both the input and output port and was separated from the resonator by a 100 nm gap. Modulation electrodes were then photolithographically defined and deposited using standard lift-off processing. The left and right electrodes were approximately 4.0 m wide and were spaced about 400 and 300 nm from the resonator, respectively ͑Fig. 1͒. The modulation electrodes were designed to preferentially orient the directors of the NLC molecules parallel ͑azimuthally oriented͒ to the resonator. To minimize their electrostatic ene...