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This research studied the effects of different laser energies on structural and optical properties. We prepared CdTe thin films by PLD technique using an Nd:YAG laser with a wavelength of 1064 nm and different energies (400, 500, 600, and 700 mJ). The practical experiments were carried out at a temperature of 200 °C. XRD results revealed that all the prepared thin films have polycrystalline structures and cubic systems with average crystalline sizes of 34, 42, 54, and 57 nm for 400, 500, 600, and 700 mJ, respectively. We observed that the optical energy gap of CdTe thin films decreases with the increase of laser energy (1.87–1.58 eV). The topography of the surfaces of CdTe thin films deposited on glass substrates was studied by the AFM technique, and it was shown that the average diameter of all CdTe films increases with increasing laser energies. The mentioned properties were studied for the application of this thin film as the absorber layer in constructing a solar cell.

In this paper , Copper(I) Iodide (CuI) thin films were prepared by Pulsed Laser Deposition (PLD).The effect of different No. of laser pulse (200,500 and 800) on the structural and electrical properties were studied . The structure of all CuI films is tested using X-ray diffraction (XRD) the results were found to be polycrystalline of hexagonal structure with strong crystalline orientation at (111)plane. D.C measurements revealed that the electrical activation energy (Ea) decreases with increasing of pulse shoot of thin films. The Hall effect measurements confirmed that the CuI are Ptype and the charge carriers concentration (n) were increased with increasing of pulse shoots .Also, it can observe that Hall mobility ( H ) decreases with the increasing of pulse shoot for films.