Grain boundaries are observed and characterized in chemical vapor deposition-grown sheets of hexagonal boron nitride (h-BN) via ultra-high-resolution transmission electron microscopy at elevated temperature. Five- and seven-fold defects are readily observed along the grain boundary. Dynamics of strained regions and grain boundary defects are resolved. The defect structures and the resulting out-of-plane warping are consistent with recent theoretical model predictions for grain boundaries in h-BN.
Boron nitride nanoribbons (BNNRs), the boron nitride structural equivalent of graphene nanoribbons (GNRs), are predicted to possess unique electronic and magnetic properties. We report the synthesis of BNNRs through the potassium-intercalation-induced longitudinal splitting of boron nitride nanotubes (BNNTs). This facile, scalable synthesis results in narrow (down to 20 nm), few sheet (typically 2-10), high crystallinity BNNRs with very uniform widths. The BNNRs are at least 1 μm in length with minimal defects within the ribbon plane and along the ribbon edges.
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