Accurate circuit models derived from electromagnetic simulations have been used to fabricate photomixer sources with optimized high-impedance antennas. Output powers on the order of 1 W were measured for various designs spanning 0.6-2.7 THz. The improvement in output power ranged from 3 to 10 dB over more conventionally designed photomixers using broad-band log-spiral antennas. Measured data on single dipoles, twin dipoles, and twin slots are in good agreement with the characteristics predicted by the design simulations.

We study the Curie temperature and hole density of (Ga,Mn)As while systematically varying the As-antisite density. Hole compensation by As-antisites limits the Curie temperature and can completely quench long-range ferromagnetic order in the low doping regime of 1-2% Mn. Samples are grown by molecular beam epitaxy without substrate rotation in order to smoothly vary the As to Ga flux ratio across a single wafer. This technique allows for a systematic study of the effect of As stoichiometry on the structural, electronic, and magnetic properties of (Ga,Mn)As. For concentrations less than 1.5% Mn, a strong deviation from TC ∝ p 0.33 is observed. Our results emphasize that proper control of As-antisite compensation is critical for controlling the Curie temperatures in (Ga,Mn)As at the low doping limit.

A traveling-wave THz photomixer based on a free-space optical-THz phase-matching scheme is proposed. A dc-biased coplanar strip line fabricated on low-temperature-grown GaAs serves as the active area of the device, and is illuminated by two noncollinear laser beams which generate interference fringes that are accompanied by THz waves. The device with the laser-power-handling capability over 300 mW and a 3-dB bandwidth of 1.8 THz was experimentally demonstrated. The results show that traveling-wave photomixers have the potential to surpass small-area designs.

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