We report the design, fabrication and characterization of a microfabricated surface-electrode ion trap that supports controlled transport through the two-dimensional intersection of linear trapping zones arranged in a 90 • cross. The trap is fabricated with very large scalable integration techniques which are compatible with scaling to a large quantum information processor. The shape of the radio-frequency electrodes is optimized with a genetic algorithm to reduce axial pseudopotential barriers and minimize ion heating during transport. Seventy-eight independent dc control electrodes enable fine control of the trapping potentials. We demonstrate reliable ion transport between junction legs and determine the rate of ion loss due to transport. Doppler-cooled ions survive more than 10 5 round-trip transits between junction legs without loss and more than 65 consecutive round trips without laser cooling.

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State-of-the-art microfabricated ion traps for quantum information research are approaching nearly one hundred control electrodes. We report here on the development and testing of a new architecture for microfabricated ion traps, built around ball-grid array (BGA) connections, that is suitable for increasingly complex trap designs. In the BGA trap, through-substrate vias bring electrical signals from the back side of the trap die to the surface trap structure on the top side. Gold-ball bump bonds connect the back side of the trap die to an interposer for signal routing from the carrier. Trench capacitors fabricated into the trap die replace area-intensive surface or edge capacitors. Wirebonds in the BGA architecture are moved to the interposer. These last two features allow the trap die to be reduced to only the area required to produce trapping fields. The smaller trap dimensions allow tight focusing of an addressing laser beam for fast single-qubit rotations. Performance of the BGA trap as characterized with 40 Ca + ions is comparable to previous surface-electrode traps in terms of ion heating rate, mode frequency stability, and storage lifetime. We demonstrate two-qubit entanglement operations with 171 Yb + ions in a second BGA trap.

Abstract. Recent advances in quantum information processing with trapped ions have demonstrated the need for new ion trap architectures capable of holding and manipulating chains of many (>10) ions. Here we present the design and detailed characterization of a new linear trap, microfabricated with scalable complementary metal-oxide-semiconductor (CMOS) techniques, that is well-suited to this challenge. Forty-four individually controlled dc electrodes provide the many degrees of freedom required to construct anharmonic potential wells, shuttle ions, merge and split ion chains, precisely tune secular mode frequencies, and adjust the orientation of trap axes. Microfabricated capacitors on dc electrodes suppress radio-frequency pickup and excess micromotion, while a top-level ground layer simplifies modeling of electric fields and protects trap structures underneath. A localized aperture in the substrate provides access to the trapping region from an oven below, permitting deterministic loading of particular isotopic/elemental sequences via species-selective photoionization. The shapes of the aperture and radio-frequency electrodes are optimized to minimize perturbation of the trapping pseudopotential. Laboratory experiments verify simulated potentials and characterize trapping lifetimes, stray electric fields, and ion heating rates, while measurement and cancellation of spatiallyvarying stray electric fields permits the formation of nearly-equally spaced ion chains.

We present a microfabricated surface-electrode ion trap with a pair of integrated waveguides that generate a standing microwave field resonant with the 171 Yb + hyperfine qubit. The waveguides are engineered to position the wave antinode near the center of the trap, resulting in maximum field amplitude and uniformity along the trap axis. By calibrating the relative amplitudes and phases of the waveguide currents, we can control the polarization of the microwave field to reduce off-resonant coupling to undesired Zeeman sublevels. We demonstrate single-qubit π -rotations as fast as 1 µs with less than 6% variation in Rabi frequency over an 800 µm microwave interaction region. Fully compensating pulse sequences further improve the uniformity of X -gates across this interaction region.