We report on long-range spin wave (SW) propagation in nanometer-thick Yttrium Iron Garnet (YIG) film with an ultralow Gilbert damping. The knowledge of a wavenumber value | ⃗ | is essential for designing SW devices. Although determining the wavenumber | ⃗ | in experiments like Brillouin light scattering spectroscopy is straightforward, quantifying the wavenumber in all-electrical experiments has not been widely commented so far.We analyze magnetostatic spin wave (SW) propagation in YIG films in order to determine SW wavenumber | ⃗ | excited by the coplanar waveguide. We show that it is crucial to consider influence of magnetic anisotropy fields present in YIG thin films for precise determination of SW wavenumber. With the proposed methods we find that experimentally derived values of | ⃗ | are in perfect agreement with that obtained from electromagnetic simulation only if anisotropy fields are included.
We report on the correlation of structural and magnetic properties of Y3Fe5O12 (YIG) films deposited on Y3Al5O12 substrates using pulsed laser deposition. The recrystallization process leads to an unexpected formation of interfacial tensile strain and consequently strain-induced anisotropy contributing to the perpendicular magnetic anisotropy. The ferromagnetic resonance linewidth of YIG is significantly increased in comparison to a film on a lattice-matched Gd3Ga5O12 substrate. Notably, the linewidth dependency on frequency has a negative slope. The linewidth behavior is explained with the proposed anisotropy dispersion model.
We show that using maskless photolithography and the lift-off technique patterned yttrium iron garnet thin films possessing ultra-low Gilbert damping can be accomplished. The films of the 70 nm thickness were grown on (001)-oriented gadolinium gallium garnet by means of pulsed laser deposition and exhibit high crystalline quality, low surface roughness and effective magnetization of 127 emu/cm 3 . The Gilbert damping parameter is as low as 5 × 10 −4 . The obtained structures have well-defined sharp edges which along with good structural and magnetic film properties, pave a path in the fabrication of high-quality magnonic circuits as well as oxide-based spintronic devices.Yttrium iron garnet (Y 3 Fe 5 O 12 , YIG) has become an intensively studied material in recent years due to exceptionally low damping of magnetization precession and electrical insulation enabling its application in research on spin-wave propagation 1-3 , spin-wave based logic devices 4-6 , spin pumping 7 , and thermally-driven spin caloritronics 8 . These applications inevitably entail film structurization in order to construct complex integrated devices. However, the fabrication of high-quality thin YIG films requires deposition temperatures over 500C 6,[9][10][11][12][13][14][15][16][17][18] leading to top-down lithographical approach that is ion-beam etching of a previously deposited plain film whereas patterned resist layer serves as a mask.Consequently, this method introduces crystallographic defects, imperfections to surface structure and, in the case of YIG films, causes significant increase of the damping parameter. [19][20][21] Moreover, it does not ensure well-defined structure edges for insulators, which play a crucial role in devices utilizing
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