We studied selective area growth modeling and characterization of the AlGaInAs material system. We used a three-dimensional vapor phase diffusion model to extract the effective diffusion lengths of Al, Ga, and In species from measured thickness profiles of the three binaries AlAs, GaAs, and InP. Our growth conditions yield to 50, 85, and 10 m for Al, Ga, and In, respectively. Based on these values, we achieved a precise prediction of AlGaInAs thickness, composition, band gap, and biaxial strain variations in different selective area growth conditions. Particular attention was paid to the influence of neighboring cells in the case of high mask density. This configuration occurs in practical component mask layout. High mask density leads to interferences between masked cells and enhances the effect of the long diffusion length of aluminum and gallium species. Then, the biaxial strain is tensile shifted and the band gap is blue shifted in the vicinity of a mask, compared to reference material features grown away from the mask. High-resolution micro-photoluminescence and optical interferometer microscopy measurements confirmed the validity of simulated band gap and thickness variations for both bulk and multi-quantum well layers.
We present optical studies of quantum dot tunnel injection structures for 1.3 μm emission with an InGaAsN quantum well injector. Photoreflectance spectroscopy supported by effective mass calculations within the band anticrossing model has been used to identify the optical transitions. Based on that, an evidence of the tunneling from the injector well to the dots could be detected by photoluminescence excitation up to the free carrier regime at room temperature. The latter finds confirmation in shortened photoluminescence rise times, when compared to the injector-free quantum dot reference structure.
Articles you may be interested inTemperature dependence of electroabsorption dynamics in an InAs quantum-dot saturable absorber at 1.3 μ m and its impact on mode-locked quantum-dot lasers Appl. Phys. Lett. 97, 121110 (2010); 10.1063/1.3489104Pulse generation at 346 GHz using a passively mode locked quantum-dash-based laser at 1.55 μ m Ultrashort, high-power pulse generation from a master oscillator power amplifier based on external cavity mode locking of a quantum-dot two-section diode laserWe demonstrate passive mode locking in one-section monolithic semiconductor laser diodes based on quantum-dash active layer at very high repetition rate in the 1.5 m window. Transform-limited pulses are generated at 134 GHz with subpicosecond width, without any pulse compression scheme. A 50 kHz linewidth of the radio-frequency spectrum is also demonstrated at 42 GHz, the lowest value reported for any passively mode-locked semiconductor laser. We further show that the saturable absorption section in two-section devices has no significant impact on the mode-locking behavior.
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