In the previous paper (1) the first observation of spin-dependent recombination at dislocations in Si was reported. The resonant decrease of photoconductivity was observed under conditions of an EPR experiment using microwave power modulation and signal detection by a lock-in amplifier. This method reveals only the integral from of the resonant signal. Moreover, the signal under investigation appears on the background of a synchronous but non-resonant signal of magnetoresistive origin(2). The last signal increases with lowering the temperature approximately a s the square of the current carrier mobility, making the measurements of spin-dependent photoconductivity at the lowest temperatures impossible.
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