Abstract:Application of heat-conducting coatings for cooling of high-power FETs based on heterostructures with arsenide–gallium substrate is theoretically analyzed. When the basic technology for manufacturing of transistors is employed in the absence of additional efforts aimed at a decrease in the thermal resistance of the substrate, the application of an additional thermal interface that represents a heat-conducting dielectric coating makes it possible to substantially decrease the overheating of the transistor chann… Show more
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