2007
DOI: 10.1016/s1369-7021(07)70078-0
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ZnO – nanostructures, defects, and devices

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Cited by 1,588 publications
(919 citation statements)
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References 122 publications
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“…Here, the Zn 2+ species reacts with OH − to form the Zn(OH) 2 intermediate complex, which decomposes to ZnO at high temperatures. This can be demonstrated in the following chemical reactions [37]:…”
Section: Introductionmentioning
confidence: 93%
“…Here, the Zn 2+ species reacts with OH − to form the Zn(OH) 2 intermediate complex, which decomposes to ZnO at high temperatures. This can be demonstrated in the following chemical reactions [37]:…”
Section: Introductionmentioning
confidence: 93%
“…ZnO has a wide direct energy band gap of 3.37 eV at room temperature (25 °C), many radiative deep level defects and relatively large exciton binding energy of 60 meV, which makes ZnO useful for sensing and optoelectronic device applications [44,45].…”
Section: Metal Oxide Semiconductor Nanostructuresmentioning
confidence: 99%
“…25,26 Note that the controllability of the defect density depends on the type of defect and the semiconductor itself. 1,6,[8][9][10][11][12][13] In the context of ZnO, numerous studies deal with V O s, 4,8,10,11,13,21 which is not the case with Zn i s. It is also notable that the balance between the relative densities of Zn i s and V O s is still challenging.…”
Section: Introductionmentioning
confidence: 99%