A. Dadgar, A. Krtschil, F. Bertram, S. Giemsch, T. Hempel, P. Veit, A. Diez, N. Oleynik, R. Clos, J. Christen, A. Krost
We present the growth of high quality ZnO layers by metal-organic vapor phase epitaxy and the impact of growth defects on impurity incorporation. For undoped as well as for doped layers impurities are preferentially incorporated at growth defects. Group-V doping by arsenic or nitrogen most probably leads to the incorporation of acceptor levels suitable for p-type doping with local but no general p-type conductivity. We find that for co-doping with arsenic and nitrogen, homogeneous p-type conductivity can be a…
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