ZnO:Eu Filmlerinin Mikroyapısal ve Optik Özellikleri

Büyük, Gonca İlgü; Ilıcan, Saliha

doi:10.31466/kfbd.473808

Cited by 3 publications

(1 citation statement)

References 31 publications

(28 reference statements)

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“…In other words, ZnO, which is characterized by the hexagonal wurtzite structure, may exhibit different characteristics due to defects such as zinc interstitials and oxygen vacancies, which depend on the growth technique and growth parameters. Similar results were found also by many other authors [40,41]. Therefore, it can be suggested that the evaluation of ZnO's characteristics should be made taking the growth technique into consideration.…”

Section: Resultssupporting

confidence: 88%

A Bibliometric Analysis of the Publications on In Doped ZnO to be a Guide for Future Studies

Yılmaz

Grilli

Turgut

2020

Metals

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This study aims to examine the studies regarding In doped ZnO published in the Web of Science database. A total of 777 articles were reached (31 March 2020). The articles were downloaded for the bibliometric analysis and collected in a file. The file was uploaded to VOSViewer programme in order to reveal the most used keywords, words in the abstracts, citation analyses, co-citation and co-authorship and countries analyses of the articles. The results showed that the most used keywords were “ZnO”, “photoluminescence”, “optical properties”, “thin films” and “doping”. These results indicate that the articles mostly focus on some characteristics of In doped ZnO thin films such as structural, optical and electrical features. When the distribution of the number of articles using the keywords by year was searched, it was found that recent articles focus mainly on synthesis of In doped ZnO film via chemical routes such as sol-gel and hydrothermal syntheses, and on ZnO-based device applications such as solar cells and gas sensors. The most used keywords were also found to be films, X-ray, glass substrate, X-ray Diffraction (XRD), spectra and layer. These results indicate that the studies mostly focus on In doped ZnO thin films as transparent conductive oxide (TCO) material used in device applications like solar cells. In this context, it was found that structural, topographical, optical, electrical and magnetic properties of In doped ZnO films were characterized in terms of defected structure or defect type, substrate temperature, film thickness and In doping content. When the distribution of these words is shown on a year-by-year basis, it is evident that more recent articles tend to focus both on efficiency and performance of In doped ZnO films as TCO in solar cells, diodes and photoluminescence applications both on nanostructures, such as nanoparticles, and nanorods for gas sensor applications. The results also indicated that Maldonado and Asomoza were the most cited authors in this field. In addition, Major, Minami and Ozgur were the most cited (co-citation) authors in this field. The most cited journals were found to be Thin Solid Films, Journal of Materials Science Materials in Electronics and Journal of Applied Physics and, more recently, Energy, Ceramics International, Applied Physics-A, Optik, Material Research Express, ACS Applied Materials and Interfaces and Optical Materials. The most co-cited journals were Applied Physics Letters, Thin Solid Films, Journal of Applied Physics, Physical Review B, and Applied Surface Science. Lastly, the countries with the highest number of documents were China, India, South Korea, USA and Japan. Consequently, it is suggested that future research needs to focus more on synthesis and characterization with different growth techniques which make In doped ZnO suitable for device applications, such as solar cells and diodes. In this context, this study may provide valuable information to researchers for future studies on the topic.

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Section: Resultssupporting

confidence: 88%

A Bibliometric Analysis of the Publications on In Doped ZnO to be a Guide for Future Studies

Yılmaz

Grilli

Turgut

2020

Metals

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An Investigation of the optoelectrical properties of n-TiO2Eu/p-Si heterojunction photodiode

Rüzgar

Çağlar

Polat

et al. 2022

Surfaces and Interfaces

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FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS

Ilıcan

2019

Eskişehir Technical University Journal of Science and Technology a - Applied Sciences and Engineering

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In this work, Er doped ZnO films and silicon substrates were used as n-type and p-type semiconductors, respectively. In order to obtained p-Si/n-ZnO:Er heterojunction structures, top (aluminum; Al) and bottom (gold; Au) metal contacts were deposited using a evaporator and sputter, respectively. The electrical characterization of these heterojunctions were investigated by current-voltage (I-V) characteristics at room temperature and in dark. It was observed that Au/p-Si/n-ZnO:Er/Al heterojunction structures have rectifying properties. The diode parameters such as barrier height, series resistance and ideality factor were investigated by using I-V measurement data. These parameters were determined by using different methods.

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ZnO:Eu Filmlerinin Mikroyapısal ve Optik Özellikleri

Cited by 3 publications

References 31 publications

A Bibliometric Analysis of the Publications on In Doped ZnO to be a Guide for Future Studies

A Bibliometric Analysis of the Publications on In Doped ZnO to be a Guide for Future Studies

An Investigation of the optoelectrical properties of n-TiO2Eu/p-Si heterojunction photodiode

FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS

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