2018
DOI: 10.1002/adfm.201803142
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ZnO/CuCrO2 Core–Shell Nanowire Heterostructures for Self‐Powered UV Photodetectors with Fast Response

Abstract: An original self-powered UV photodetector integrating ZnO/CuCrO 2 core-shell nanowire heterostructures is fabricated using low-cost and scalable chemical deposition techniques operating at moderate temperatures. A 35 nm thick delafossite phase CuCrO 2 shell is formed with high uniformity by aerosol-assisted chemical vapor deposition over an array of vertically aligned ZnO nanowires grown by chemical bath deposition. The CuCrO 2 shell consists of columnar grains at the top of ZnO nanowires as well as nanograins… Show more

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Cited by 81 publications
(55 citation statements)
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“…1D core‐shell heterojunction nanostructures have great potential for high‐performance compact optoelectronic devices owing to their high interface area‐to‐volume ratio . To date, core‐shell heterostructure nanowire systems, such as InAs/AlSb, InGaAs‐GaAs, ZnO/CuCrO 2 , and GaN/AlN, with outstanding performance as photodetectors have been reported . For example, β‐Ga 2 O 3 is an excellent candidate for solar‐blind photodetection, with a direct wide bandgap of ~ 4.9 eV (253 nm).…”
Section: Nanowire Photodetectorsmentioning
confidence: 99%
See 1 more Smart Citation
“…1D core‐shell heterojunction nanostructures have great potential for high‐performance compact optoelectronic devices owing to their high interface area‐to‐volume ratio . To date, core‐shell heterostructure nanowire systems, such as InAs/AlSb, InGaAs‐GaAs, ZnO/CuCrO 2 , and GaN/AlN, with outstanding performance as photodetectors have been reported . For example, β‐Ga 2 O 3 is an excellent candidate for solar‐blind photodetection, with a direct wide bandgap of ~ 4.9 eV (253 nm).…”
Section: Nanowire Photodetectorsmentioning
confidence: 99%
“…152 To date, core-shell heterostructure nanowire systems, such as InAs/AlSb, InGaAs-GaAs, ZnO/CuCrO 2 , and GaN/AlN, with outstanding performance as photodetectors have been reported. [153][154][155][156] For example, β-Ga 2 O 3 is an excellent candidate for solarblind photodetection, with a direct wide bandgap of 4.9 eV (253 nm). Most β-Ga 2 O 3 nanostructure-based photodetectors are photoconductive with a relatively slow response speed due to the persistent photoconductivity effect.…”
Section: Nanowire Photodetectorsmentioning
confidence: 99%
“…To boost the performance, a common and feasible approach is synthesis of low‐dimensional ZnO nanostructures (NSs) to trap the incident light beams, such as ZnO nanowires (NWs), nanoflowers, and nanoflakes, which can significantly restrict the response speed and carrier transport of devices. Alternatively, another effective approach is combining other materials to fabricate p‐n junctions working at a relatively lower voltage, such as 3,4‐ethylenedioxythiophene: poly(styrenesulfonate) (PEDOT:PSS), CuS, CuCrO 2 , NiO, etc., but it can sacrifice the commercial costs against the Moore's law of miniaturization of microelectronics and introduce mismatch in detectors.…”
Section: Introductionmentioning
confidence: 99%
“…Heterojunction photodetectors can also be constructed using a hybrid junction of organic and inorganic materials, which provide benefits such as low materials synthesis and junction fabrication cost. Nevertheless, lattice mismatch between different materials results in crystalline defects and causes low photocurrent and responsivity, which consequently have posed a challenge for high‐performance heterojunction self‐powered photodetectors …”
Section: Introductionmentioning
confidence: 99%