Zn‐Doped P‐Type InAs Nanocrystal Quantum Dots

Abstract

FET Characterization: Electrical characterization of the devices was performed under vacuum using a sealed probe station, in the dark. Measurements were taken using two Keithley 2400 source meters for source -gate, and source -drain bias, respectively.Details on the optical and spectroscopic characterizations are provided in the Supporting Information.

P - and N -type InAs nanocrystals with innately controlled semiconductor polarity

“…S5). This is consistent with previous results observed for various InAs NCs prepared using different synthetic protocols ( 13 , 24 , 26 ). Such a robust n -type characteristic for InAs NCs is different from that observed for other NC systems with narrow bandgaps in the NIR, such as PbS or PbSe NCs (the semiconductor polarity for PbS or PbSe NCs is strongly affected by the ligands and surface characteristics) ( 37 – 39 ).…”

“…S9). This strongly supports the existence of a Zn-As chemical environment within the p -InAs NCs, indicating substitutional doping of Zn into an In site ( 26 ). Meanwhile, the peak at R = 2.096 Å corresponds to Zn coordinating with the amines of the surface ligands or Zn forming oxides.…”

“…Very recently, attempts have been made to dope InAs NCs into p-type by introducing heterovalent atoms within the lattice. However, the reported studies either used toxic Cd as the dopant or used complicated postsynthetic doping steps, which only resulted in moderate hole mobilities (24)(25)(26). P-type InAs NCs with hole mobility comparable to their n-type counterpart have been hardly achieved.…”

Boosting the Photoluminescence Efficiency of InAs Nanocrystals Synthesized with Aminoarsine via a ZnSe Thick‐Shell Overgrowth

“…[10,11] Aside from the well-developed, but toxic Hg-based (II-VI) and Pb-based (IV-VI) NCs, [12][13][14] the most promising NIR emissive NCs are those based on (III-V) InAs. [8,15,16] This type of colloidal NCs semiconductor is indeed compliant with the European Union "Restriction of Hazardous Substances" (RoHS) directives, [17][18][19][20][21][22][23] and its optical bandgap can be tuned from ≈700 to ≈1600 nm, making it an ideal candidate for commercial NIR devices. [8,15,[24][25][26] To implement InAs NCs in optoelectronic devices, their optical properties require further optimization, not only in terms of their absorption peak position and linewidth, [24,25,27,28] but also of their photoluminescence (PL) quantum yield (QY) and Auger recombination rate.…”

Wurtzite InAs Nanocrystals with Short-Wavelength Infrared Emission Synthesized through the Cation Exchange of Cu3As Nanocrystals

“…Colloidal semiconductor nanocrystals (NCs) display exceptional optical properties, including size-dependent emission wavelength, wide spectral tunability, and good solution processability, leading to their successful implementation in a variety of optoelectronic device applications, including light-emitting diodes (LEDs) for solid-state displays, lighting, and photodetectors. − Compared with the most-studied group II–VI NCs, the group III–V NCs possess more covalent bonding lattices and hence lower permittivity and weaker screening. This is particularly attractive for photoelectric conversion processes, where efficient charge separation and extraction are mandatory. − Moreover, the heavy-metal-free nature of the group III–V NCs makes them promising candidates for next-generation, environmentally friendly optoelectronic devices. − Indeed, the toxic-element-containing feature of Cd- and Pb-based NCs severely restricts their applications in consumer electronics as required by regulations, which is one of the major obstacles toward commercialization. − …”