DOI: 10.1557/proc-1260-t10-07
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Abstract: We report on the use of Zn as an n-type dopant in CuCl thin films for optoelectronic applications, wherein maximum n-type doping of the order of 10 18 cm -3 has been achieved. Zn doped nanocrystalline CuCl thin films are successfully deposited on glass and Si substrates by pulsed dc magnetron sputtering. Structural and morphological properties are investigated using X-ray diffraction (XRD) studies and Scanning Electron Microscopy (SEM), respectively. The conductivity of the CuCl:Zn films is examined using the … Show more

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