volume 15, issue 1-2, P211-213 2001
DOI: 10.1016/s0928-4931(01)00218-1
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A. Bianco, M. Viticoli, G. Gusmano, M. Paci, G. Padeletti, P. Scardi

Abstract: Zirconium titanate-based thin films are considered as a promising dielectric material for the next generation of integrated microwave devices. The zirconium tin titanate (ZTS) precursor was prepared via a polymeric precursor process in aqueous phase. based on the citrate route. The presented chemical procedure is original for this kind of materials. C-13 nuclear magnetic resonance (NMR) spectra showed that stable mixed-metal chelate complex has been formed. The viscous resin was multiple spin-coated with inter…

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