Zircônia tetragonal policristalina. Parte II: Microestrutura e resistividade elétrica

Tadokoro, S. K.; Muccillo, E.N.S.

doi:10.1590/s0366-69132001000200007

Cited by 8 publications

(11 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…S2), and A is the conduction cross section area, between contacts, A = 0.04 cm 2 . A high resistivity ρ = 9.9 × 10 9 Ω m was found, in good agreement with reported values [25].…”

Section: Zro 2 Applied To Mim Devices 321 Zirconia Based Mims On Gsupporting

confidence: 91%

Annealing temperature influence on sol-gel processed zirconium oxide thin films for electronic applications

Boratto

Congiu

Santos

et al. 2018

Ceramics International

View full text Add to dashboard Cite

A study of zirconium oxide (ZrO 2) thin films obtained by the non-alkoxide sol-gel method at different annealing temperatures, up to 450°C, is presented. Morphological, compositional, and optical characterizations of zirconia thin films show high transparency and high bandgap, besides homogeneous and non-porous surface. Metalinsulating-metal (MIM) devices were assembled from this zirconia material for electrical characterizations and have shown high electric resistivity and high specific capacitance. A study of the thin film composition shows residues of S and Cl elements from the precursor solution that contributes for reduction of the dielectric constant of the zirconia thin films, even though they still present higher values when compared to SiO 2 , which is a positive alternative to replace this oxide in electronic devices. A parallel study of MIM assembled on polymeric substrate and annealed at 100°C also leads to positive results concerning high electrical insulating and capacitance. This study aims the understanding of the relations between annealing temperature and impurities found in sol-gel based thin films, as well as their relations to dielectric characteristics of zirconia thin films that impact the final properties of electronic devices, such as in field effect transistors.

show abstract

“…S2), and A is the conduction cross section area, between contacts, A = 0.04 cm 2 . A high resistivity ρ = 9.9 × 10 9 Ω m was found, in good agreement with reported values [25].…”

Section: Zro 2 Applied To Mim Devices 321 Zirconia Based Mims On Gsupporting

confidence: 91%

Annealing temperature influence on sol-gel processed zirconium oxide thin films for electronic applications

Boratto

Congiu

Santos

et al. 2018

Ceramics International

View full text Add to dashboard Cite

show abstract

“…With the data collected from the curves, it was possible to verify the grain resistivity ρ G (Ω.cm) in Eq. 6: [12] ρ G = R(S/l) (6) where R is the resistance (Ω) obtained from the diameter of the semicircle of high-frequency, S (cm 2 ) being the electrode area and l (cm) the thickness of the sample.…”

Section: Methodsmentioning

confidence: 99%

Electrical Properties at Grain Boundaries Influenced by Cr³⁺Diffusion in SnO₂.ZnO.Nb₂O₅-Films Varistor Prepared by Electrophoresis Deposition

et al. 2014

View full text Add to dashboard Cite

SnO 2 -based varistors are strong candidates to replace the ZnO-based varistors due to ordering fewer additives to improve its electrical behavior as well as by showing similar nonlinear characteristics of ZnO varistors. In this work, SnO 2 -nanoparticles based-varistors with addition of 1.0 %mol of ZnO and 0.05 %mol of Nb 2 O 5 were synthesized by chemical route. SnO 2 .ZnO.Nb 2 O 5 -films with 5 μm of thickness were obtained by electrophoretic deposition (EPD) of the nanoparticles on Si/Pt substrate from alcoholic suspension of SnO 2 -based powder. The sintering step was carried out in a microwave oven at 1000 °C for 40 minutes. Then, Cr 3+ ions were deposited on the films surface by EPD after the sintering step. Each sample was submitted to different thermal treatments to improve the varistor behavior by diffusion of ions in the samples. The films showed a nonlinear coefficient (α) greater than 9, breakdown voltage (V R ) around 60 V, low leakage current (

show abstract

“…Nesta Figura todos os picos apresentaram predominantes picos da fase cúbica, tipo fluorita, indexados pelo padrão JCPDS # 82-1246. É importante frisar que há autores [19][20] que atribuem estes picos identificados a uma pseudofase cúbica, que é formada de uma fase metaestável tetragonal, cuja identificação por DRX não seria possível, mas sua condutividade elétrica é menor que do sistema cúbico [17][18][19][20]. Através do calculo da razão dos parâmetros de rede c/a pelo programa FULLPROF verificou-se que os mesmos tendem para a unidade, o que corrobora com os dados da literatura [17][18][19][20], reforçando a suposição de que a rede está tendendo à estabilização total na forma cúbica.…”

Section: Caracterização Estruturalunclassified

Deposição de filmes de ZEI 8% em mol por sistema de spray pirólise modificado

Toniato

2008

Matéria (Rio J.)

View full text Add to dashboard Cite

RESUMONeste trabalho, foram produzidos filmes de zircônia estabilizada com ítria com 8 % em mol (ZEI), que podem aplicados como eletrólitos para pilhas a combustível de óxido sólido (PaCOS), abrasivos e proteção anti-corrosiva, depositados em substrato de quartzo pela técnica de spray pirólise e tratados termicamente a 1000ºC. Para obtenção dos filmes, foi utilizado um sistema de deposição por spray-pirólise modificado segundo patente depositada no INPI, que se comparado ao sistema tradicional onde o bico atomizador fica estático durante o processo de deposição, resulta na produção de filmes de melhor homogeneidade, rugosidade e na redução dos defeitos morfológicos, como as trincas e fissuras. As melhorias no aparelho de deposição forneceram, também, melhor controle sobre os parâmetros de deposição quando comparado ao sistema tradicional, como a taxa e temperatura de deposição. A estrutura do filme foi analisada através de difração de raios X, que se apresentaram policristalinos e de acordo com a identificação realizada com o padrão JCPDS # 821246, os filmes de YSZ estão arranjados em uma estrutura cúbica de face centrada do tipo fluorita, e com orientação preferencial dos grãos no plano (111). A morfologia dos filmes foi analisada por imagens de microscopia ótica e microscopia de força atômica, sendo comparada às trincas, a rugosidade e distribuição de grãos, para os filmes após o tratamento térmico. Os melhores resultados foram obtidos para os filmes depositados pelo método de spray pirólise modificado quando comparado ao sistema tradicional. Palavras-chaves: ZEI, eletrólitos, PaCOS e MESP®. Deposition of YSZ 8 mol% films by modified spray pyrolysis system ABSTRACTIn this work zirconia stabilized with itria films 8 mol% (8YSZ) had been produced, applied as electrolytes for solid oxide fuel cell (SOFC), deposited in quartz substrate spray-pyrolysis technique and treated at 1000ºC. For attainment of films a system deposition for spray-pyrolysis modified according to patent deposited in INPI was used, that if compared with traditional system where atomized is static during deposition process, results in production of films more homogeneous, roughness and reduction of morphologic defects, at cracks. The improvements in deposition apparatus had also supplied better control of deposition parameters when compared with traditional system, with solution flow rate and temperature of deposition. The structure of films had been analyzed through X-ray diffractometry (XRD) results indicated that polycrystals films, structure cubical centered face of fluorite type with preferential orientation of grains in plan (111) identification through of standard JCPDS # 821246. The films morphology was analyzed by optical microscopy and atomic force microscopy, being compared cracks, roughness and distribution of grains, for films after thermal treatment. The results indicate that the use deposited in modified method of spray-pyrolysis (MESP®) appropriate deposited films the deposited were dense, crack-free and well adhered to the subs...

show abstract

Zircônia tetragonal policristalina. Parte II: Microestrutura e resistividade elétrica

Cited by 8 publications

References 24 publications

Annealing temperature influence on sol-gel processed zirconium oxide thin films for electronic applications

Annealing temperature influence on sol-gel processed zirconium oxide thin films for electronic applications

Electrical Properties at Grain Boundaries Influenced by Cr³⁺Diffusion in SnO₂.ZnO.Nb₂O₅-Films Varistor Prepared by Electrophoresis Deposition

Deposição de filmes de ZEI 8% em mol por sistema de spray pirólise modificado

Contact Info

Product

Resources

About

Zircônia tetragonal policristalina. Parte II: Microestrutura e resistividade elétrica

Cited by 8 publications

References 24 publications

Annealing temperature influence on sol-gel processed zirconium oxide thin films for electronic applications

Annealing temperature influence on sol-gel processed zirconium oxide thin films for electronic applications

Electrical Properties at Grain Boundaries Influenced by Cr3+Diffusion in SnO2.ZnO.Nb2O5-Films Varistor Prepared by Electrophoresis Deposition

Deposição de filmes de ZEI 8% em mol por sistema de spray pirólise modificado

Contact Info

Product

Resources

About

Electrical Properties at Grain Boundaries Influenced by Cr³⁺Diffusion in SnO₂.ZnO.Nb₂O₅-Films Varistor Prepared by Electrophoresis Deposition