2015
DOI: 10.1007/s12598-015-0583-5
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Zinc tin oxide thin films prepared by MOCVD with different Sn/Zn ratios

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Cited by 5 publications
(2 citation statements)
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“…We note that no interference fringes were observed, which considered to be an opposite result of ZTO films obtained by RF magnetron sputtering [18] or by chemical techniques as MOCVD [21]. The value of the optical gap energy E g of Zn 2 SnO 4 thin film (sample B2) was determined using the Tauc relation [21]:…”
Section: Optical Propertiesmentioning
confidence: 97%
“…We note that no interference fringes were observed, which considered to be an opposite result of ZTO films obtained by RF magnetron sputtering [18] or by chemical techniques as MOCVD [21]. The value of the optical gap energy E g of Zn 2 SnO 4 thin film (sample B2) was determined using the Tauc relation [21]:…”
Section: Optical Propertiesmentioning
confidence: 97%
“…Moreover, vapor phase techniques have also been used for the synthesis of nanostructured materials. These techniques include laser ablation, 75 vapour–liquid–solid, 37 thermal evaporation, 76 molecular beam epitaxy (MBE), 77 metal–organic chemical vapour deposition 78 and magnetron sputtering. 79 The choice of the method for the synthesis of ZnSnO 3 primarily relies on the desired dimensions of the nanostructures.…”
Section: Synthesis Technique/routesmentioning
confidence: 99%