ZnO film growth on sapphire and zirconium boride single crystals by the molecular beam epitaxy method was investigated. A Zn metal film could not be grown on sapphire substrates at room temperature, while an incommensurate Zn film could be grown on a zirconium boride substrate. The incommensurate Zn film could be oxidized by molecular oxygen gas, and an epitaxial ZnO film was successfully grown at room temperature.
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