Zeeman effect on surface electron transport in topological insulator Bi<sub>2</sub>Se<sub>3</sub>nanoribbons

Wang, Lixian; Yan, Yuan; Zhang, Liang; Liao, Zhi-Min; Wu, Han; Yu, Dapeng

doi:10.1039/c5nr05250e

Cited by 40 publications

(28 citation statements)

References 43 publications

(62 reference statements)

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“…Theoretically, the inplane magnetic field will only shift the position of the surface Dirac point in momentum space [54,55] and cause a net in-plane spin polarization [56]. A deformation of the Fermi pocket corresponding to the spin-density redistribution is also suggested [57]. In all, the spin momentum locking and the prohibition of backscattering in topological surface states is not destroyed in an in-plane magnetic field.…”

Section: Appendix F: Angle Dependence Of Dhva Oscillation Amplitude Imentioning

confidence: 99%

Bulk Rotational Symmetry Breaking in Kondo Insulator SmB6

et al. 2017

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The Kondo insulator samarium hexaboride (SmB 6 ) has been intensely studied in recent years as a potential candidate of a strongly correlated topological insulator. One of the most exciting phenomena observed in SmB 6 is the clear quantum oscillations appearing in magnetic torque at a low temperature despite the insulating behavior in resistance. These quantum oscillations show multiple frequencies and varied effective masses. The origin of quantum oscillation is, however, still under debate with evidence of both twodimensional Fermi surfaces and three-dimensional Fermi surfaces. Here, we carry out angle-resolved torque magnetometry measurements in a magnetic field up to 45 Tand a temperature range down to 40 mK. With the magnetic field rotated in the (010) plane, the quantum oscillation frequency of the strongest oscillation branch shows a fourfold rotational symmetry. However, in the angular dependence of the amplitude of the same branch, this fourfold symmetry is broken and, instead, a twofold symmetry shows up, which is consistent with the prediction of a two-dimensional Lifshitz-Kosevich model. No deviation of LifshitzKosevich behavior is observed down to 40 mK. Our results suggest the existence of multiple light-mass surface states in SmB 6 , with their mobility significantly depending on the surface disorder level. DOI: 10.1103/PhysRevX.7.031054 Subject Areas: Condensed Matter Physics, Strongly Correlated Materials, Topological InsulatorsIn Kondo insulators, the physics is controlled by the strong many-body interactions [1]. The hybridization between the localized f elections and conduction d electrons causes the formation of Kondo singlets, which leads to a quench of local-magnetic-moment characteristics. Also, a narrow hybridization gap is developed at low temperature, resulting in a crossover from metallic to insulating behavior. In recent years, topological nontriviality is suggested to be hosted by Kondo insulators [2,3]. The opposite parity in the f band (odd) and d band (even) protects a band inversion similar to that in normal Z 2 topological insulators. In particular, the very large spin-orbit coupling in the renormalized f electrons can give a system ground state with "nontrivial" topological order, i.e., a different topological invariant from that in vacuum. As a result, a gapless two-dimensional (2D) Dirac electron state, known as the topological surface state, has to exist at certain high-symmetry points in the surface Brillouin zone. Such predictions point out the Kondo insulators as promising candidates of interaction-driven topological insulators, subsequently make this family a focus of attention in condensed-matter physics.The cubic structured SmB 6 , the very first confirmed member of Kondo insulators [4], has been elaborately studied as the most feasible example of the electron-correlated threedimensional (3D) strong topological insulator [5][6][7]. A large amount of experimental observations on this material have been published [8], with some giving hints of the topological surface ...

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Section: Appendix F: Angle Dependence Of Dhva Oscillation Amplitude Imentioning

confidence: 99%

Bulk Rotational Symmetry Breaking in Kondo Insulator SmB6

et al. 2017

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“…Combining these results with the phenomena observed in our samples, it is clear that the parallel-field MR in Bi 2 Se 3 could be negative or positive, or even tuned from positive to negative with the increase of the magnetic field strength. Wang et al 43 suggested that Bi Se antisite defects induced local magnetic moments that were realigned when a magnetic field was applied, reducing the spin-dependent scattering and resulting in a decrease in the total resistance of the Bi 2 Se 3 sample. However, this simple argument concerning defects could not account for various behaviors of the parallel-field MR in this study.…”

Section: Background Magnetoresistancesmentioning

confidence: 99%

“…Transport measurements have revealed that the collective spin polarization of TI surface states is aligned by the current. 43 When the magnetic field is perpendicular to the current, it is parallel to the spin polarization direction; conversely, when the field is parallel to the current, it is perpendicular to the spin polarization of the surface current. In an ideal 3D TI thin film in which each of top and bottom surfaces can be treated as a 2D system, the principal effect of a parallel field is to simply shift surface states in momentum space.…”

Section: Background Magnetoresistancesmentioning

confidence: 99%

“…24 At high temperature, the Lorentz force deflects surface electrons, leading to a positive MR that results from the classical galvanomagnetic effect. 43 If TSSs contribute to a positive MR, the source of a negative MR in a parallel field is clearly either owing to 2DEG near TSSs or owing to bulk states. Recently, triggered by the discovery of Weyl semimetals TaP 46 and TaAs 47 and the Dirac semimetals Na 3 Bi 48 and Cd 3 As 2 , 49 it has been proposed that a quantum mechanical phenomenon called the axial anomaly can give rise to a negative MR.…”

Section: Background Magnetoresistancesmentioning

confidence: 99%

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Quantum transport characteristics of heavily doped bismuth selenide nanoribbons

et al. 2019

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This work experimentally investigated quantum transport characteristics of heavily doped bismuth selenide topological insulator nanoribbons to understand their physical origins. Transport properties of nanoribbons were measured via a suspended microdevice for eliminating the substrate effect. A series of quantum transport behaviors such as weak antilocalization, Shubnikov-de Haas oscillations, universal conductance fluctuation, and linear perpendicular-field magnetoresistance have been systematically studied to achieve a coherent understanding on their origins in topologically protected surface states, band bending, or bulk states. The parallel-field magnetoresistance, however, is found to be diverse, which can exhibit negative or positive values for the whole measurement range of the magnetic field strength or change from positive to negative values with the increase of the magnetic field strength. The tunable behavior of the parallel-field magnetoresistance is suggested to be the collective effects of the positive magnetoresistance from surface transport and the negative magnetoresistance possibly owing to the axial anomaly, resulting from long-range ionic impurity-scattering processes in bulk carriers.

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“…Recently, a crossover from diffusive transport behaviors in the WAL regime to variable range hopping transport in the Anderson localization regime is demonstrated in ultrathin (Bi 1− x Sb x ) 2 Te 3 film, in which negative MR emerges when the electron system becomes strongly localized . The negative MR in individual Bi 2 Se 3 nanoribbons under the in‐plane magnetic field can be explained based on the Zeeman energy induced deformation of the surface Dirac cone and the spin‐dependent scattering on local magnetic moments . The similar properties are also observed in thick films, for example, in doped Bi 2 Te 3 film with thickness of 300 nm, an inflection from WAL surface state to WL bulk state and the negative MR cusp due to bulk state take place in the parallel MR curve .…”

Section: Introductionmentioning

confidence: 98%

Magnetic Field Modulated Weak Localization and Antilocalization State in Bi₂(Te_xSe_1−x)₃ Films

Wang

Wei

et al. 2018

Physica Status Solidi (b)

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The magneto‐transport properties of a series of Bi2(TexSe1−x)3 films are investigated. It is seen that the doped samples develop an insulating behavior at low temperatures upon the increasing doping level as compared to the pristine sample Bi2Se3. The field evolution of the magneto‐resistance (MR) under perpendicular and parallel magnetic fields for Bi2(TexSe1−x)3 films with x = 0, 0.1, 0.24, 0.4, and 0.6 at temperatures from 2 to 200 K is investigated. A low field cusp behavior appears in MR data of Bi2(Te0.1Se0.9)3 film, which is associated with the weak anti‐localization (WAL). In Bi2(Te0.4Se0.6)3 films, MR with perpendicular and parallel magnetic fields shows signatures of WAL at low magnetic fields. A remarkable negative behavior, similar to weak localization (WL), under a high magnetic field parallel to the film surface is found which is dominated by bulk‐state electrons. MR of Bi2(Te0.6Se0.4)3 film reveals a low‐field WAL behavior and a high‐field parabolic behavior, revealing a two‐dimensional magneto‐transport property.

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Zeeman effect on surface electron transport in topological insulator Bi₂Se₃nanoribbons

Cited by 40 publications

References 43 publications

Bulk Rotational Symmetry Breaking in Kondo Insulator SmB6

Bulk Rotational Symmetry Breaking in Kondo Insulator SmB6

Quantum transport characteristics of heavily doped bismuth selenide nanoribbons

Magnetic Field Modulated Weak Localization and Antilocalization State in Bi₂(Te_xSe_1−x)₃ Films

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Zeeman effect on surface electron transport in topological insulator Bi2Se3nanoribbons

Cited by 40 publications

References 43 publications

Bulk Rotational Symmetry Breaking in Kondo Insulator SmB6

Bulk Rotational Symmetry Breaking in Kondo Insulator SmB6

Quantum transport characteristics of heavily doped bismuth selenide nanoribbons

Magnetic Field Modulated Weak Localization and Antilocalization State in Bi2(TexSe1−x)3 Films

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Product

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Zeeman effect on surface electron transport in topological insulator Bi₂Se₃nanoribbons

Magnetic Field Modulated Weak Localization and Antilocalization State in Bi₂(Te_xSe_1−x)₃ Films