X‐ray photoemission study of manganese thin films deposited on a layered semiconductor

Abstract

Germanium sulphide (GeS) and tin diselenide (SnSe 2 ) present anisotropic properties due to their layered crystal structures. These crystals are composed of atomic layers interacting with each other by van der Waals forces only. Recently these materials have been used to prepare a new diluted magnetic semiconductor (DMS) by substituting some Ge or Sn atoms by manganese in the crystal lattice, forming Ge 1-x Mn x S and Sn 1-x Mn x Se 2 . To compare Mn behaviour within the layered crystals, Mn/GeS and Mn/SnSe 2 thin films have been grown and investigated in situ by X-ray induced photoemission. Here is reported the XPS analysis of in situ grown Mn/SnSe 2 for coverage ranging from sub-monolayer to thin films. The properties of these films were investigated from the structural and reactivity point of view. XPS measurements suggest that an Mn-Sn alloy is formed at the interface and that Mn atoms first deposit as an atomic netting pattern dictated by the typical structure of the SnSe 2 (001) surface.

Lattice dynamics and dielectric response of Ba0.4Sr0.6−yMnyTiO3 ceramics in a wide frequency range

“…3. An asymmetrical peak was observed for the sample with y = 0.20, as expected for transition metal 2 p peaks 21. It was noteworthy that the peak with a strong satellite structure was also presented at 645–650 eV, no matter how much Mn was contained.…”

Comment on “Photoelectron spectroscopy study of Ga1−xMnxAs(001) surface oxide and low temperature cleaning” by S.A. Hatfield et al. [Surf. Sci. 585 (2005) 66]

“…3b -Ref. [1]) which coincides well with the BE region where a contribution from metallic Mn is usually observed (see [2,5,6]). …”

“…Since 2004, there appeared several papers concerning XPS studies of core-levels in different Mn compounds (zinc-blende MnTe [2,3], Sn 1Àx Mn x Te [4]) and in semiconductor structures (Mn/SnSe 2 interface [5]), where a low BE component of the Mn 2p 3/2 spectrum (indicative of Mn q+ contribution -where 0 < q < 2) was revealed. Our last paper (Ref.…”

“…Certainly, the choice of such reference line could be precise and unanimous when considering the sample containing its own reference of elemental Mn -either the bulk one (e.g. [6]) or the surfacedeposited one (see [5]). …”

“…[1]) overlaps the BE range characteristic of metallic Mn (i.e. 638.6-639.1 eV -see [2,5,6]). In such case, one can not exclude that the E 1 B component, resulting from deconvolution of the Mn 2p 3/2 XPS spectrum, comprise both the contributions, i.e.…”