2008
DOI: 10.1016/j.surfcoat.2007.11.019
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X-ray photoelectron spectroscopy analysis of zirconium nitride-like films prepared on Si(100) substrates by ion beam assisted deposition

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Cited by 72 publications
(40 citation statements)
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“…Two peaks of Zr 3d spectra correspond to the Zr 3d5/2 and Zr 3d3/2 with the spinorbit splitting of 2.4 eV. 20 The doublet Zr 3d peaks of deposited zirconium oxide thin films were observed at 181.2 and 183.6 eV caused by bonding with oxygen. 21 In Figure 4 (b), the O 1s peak for O-Si (531.7 eV) of zirconium oxide thin film coated on Si was dramatically decreased while that for O-Zr (529.6 eV) was increased.…”
Section: Resultsmentioning
confidence: 98%
“…Two peaks of Zr 3d spectra correspond to the Zr 3d5/2 and Zr 3d3/2 with the spinorbit splitting of 2.4 eV. 20 The doublet Zr 3d peaks of deposited zirconium oxide thin films were observed at 181.2 and 183.6 eV caused by bonding with oxygen. 21 In Figure 4 (b), the O 1s peak for O-Si (531.7 eV) of zirconium oxide thin film coated on Si was dramatically decreased while that for O-Zr (529.6 eV) was increased.…”
Section: Resultsmentioning
confidence: 98%
“…35-0753). In Figure 1b, Zr 3d spectrum show fitted peaks at 179.1 and 181.5 eV, which correspond to Zr 3d5/2 and Zr 3d3/2 components of the ZrN [27], respectively. Additionally, two peaks located at 182.2 and 184.6 eV, which belong to ZrO2, can be noticed as well.…”
Section: Resultsmentioning
confidence: 98%
“…The ion beam assisted deposition (IBAD) technique [14] was used to prepare thin boron films on copper substrates. The IBAD apparatus used consists of a Kaufman-type ion gun and an electronbeam evaporator, adapted to a vacuum chamber.…”
Section: Boron Deposition and Ion Beam Analysismentioning
confidence: 99%