X-ray diffraction analysis of epitaxal film distortions on miscut substrates (001)

Колесников, А. В.; Ilin, A. S.; Trukhanov, E. M.; Василенко, А. Т.; Loshkarev, I. D.; Deryabin, A. S.

doi:10.3103/s1062873811050273

Cited by 12 publications

(3 citation statements)

References 6 publications

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“…In the investigated samples, MDs from families 5 and 6 thus have higher densities. This rotation is predictable from the lower h k for these families [5] as compared to oth ers, and it was observed in different heterostructures in [1,2,4].…”

Section: Introductionmentioning

confidence: 68%

Dependence of plastic relaxation in GaAs films on nucleation of the first as monolayer on Si(001) substrates

Loshkarev

Василенко

Trukhanov

et al. 2013

Bull. Russ. Acad. Sci. Phys.

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The structure of GaAs films grown on Si(001) vicinal substrates (6° rotation about 〈011〉 axis) formed in two ways of nucleation, As deposition on Si and substitution of Si monolayer by As monolayer, is studied. X ray diffractometry is used to find that the rotation direction of a crystal lattice depends on the man ner of nucleation. An optional model of the formation of film dislocation structures is proposed.

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Section: Introductionmentioning

confidence: 68%

Dependence of plastic relaxation in GaAs films on nucleation of the first as monolayer on Si(001) substrates

Loshkarev

Василенко

Trukhanov

et al. 2013

Bull. Russ. Acad. Sci. Phys.

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“…The grown specimens were also studied by XRD with the method described in [12]. The measurements were performed in the (115) reflex independently in two mutually perpendicular directions (along and across the steps).…”

Section: Results Of Xrd Studiesmentioning

confidence: 99%

Heteroepitaxy of AIIIBV films on vicinal Si(001) substrates

Emelyanov

Feklin

Putyato

et al. 2014

Optoelectron.Instrument.Proc.

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GaAs films on Si substrates miscut from the (001) plane by 6 • in the [110] direction are grown by molecular beam epitaxy (MBE). GaAs films are grown both on the Si surface terminated by arsenic atoms and on thin pseudomorphic GaP/Si layers. The condition of formation of the As sublayer and the first monolayer of GaP on the Si surface is defined as the GaAs film orientation (001) or (001). The processes of Si surface preparation and formation of the As sublayer and GaAs and GaP epitaxial layers are monitored by means of high-energy electron diffraction reflection (RHEED). The grown structures are investigated by methods of X-ray diffraction, atomic force microscopy (ATM), high-resolution transmission electron microscopy (HRTEM), and low-temperature luminescences. It is shown that the epitaxial film orientation affects both the surface morphology and its crystalline properties. Intense photoluminescence is obtained from the In0.17Ga0.83As quantum well structure grown on the GaAs/Si buffer layer.

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“…Most commonly, the angles of the layer orientation rotation in relation to the substrate along the growth direction during the HES growth are experimentally measured by the X-ray diffraction method. The rotation of the orientation plane along the growth direction is observed when growing the heterosystems based on the various semiconductors [15][16][17][18][19][20][21][22]. For the MBE MCT HES'es on the (112)CdZnTe substrate, there was evidently the rotation of the orientation plane to 100 ang.…”

Section: Introductionmentioning

confidence: 99%

Study of the Crystalline State of MBE (013)HgCdTe/CdTe/ZnTe/GaAs Heterostructure Layers by the Second Harmonic Generation Method

et al. 2022

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The crystal perfection of HgCdTe layers of heterostructures grown on (013)GaAs substrates with ZnTe and CdTe buffer layers and orientation rotation in the plane(angle φ) and perpendicular to the growth direction (angle theta) were studied by the method of second harmonic generation. A change in the angle φ for CdTe layers was observed depending on the GaAs substrate orientation and its non-monotonic change throughout thickness in the MCT layer of constant composition and graded widegap layers at its boundaries. An increase in the angle theta was observed when growing the upper graded widegap MCT layer. The absolute value of the angle theta can be used for a qualitative assessment of the crystalline perfection of the HgCdTe layers. Keywords: crystals of the sphalerite class, second harmonic, azimuthal angular dependencies, crystal perfection, CdxHg1-xTe heterostructures.

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X-ray diffraction analysis of epitaxal film distortions on miscut substrates (001)

Cited by 12 publications

References 6 publications

Dependence of plastic relaxation in GaAs films on nucleation of the first as monolayer on Si(001) substrates

Dependence of plastic relaxation in GaAs films on nucleation of the first as monolayer on Si(001) substrates

Heteroepitaxy of AIIIBV films on vicinal Si(001) substrates

Study of the Crystalline State of MBE (013)HgCdTe/CdTe/ZnTe/GaAs Heterostructure Layers by the Second Harmonic Generation Method

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