Write Asymmetry of Spin-Orbit Torque Memory Induced by in-Plane Magnetic Fields

Jiang, Baiqing; Wu, Dajun; Zhao, Qianwen; Lou, Kaihua; Zhou, Yan; Tian, Chengfeng; Bi, Chong

doi:10.1109/led.2021.3121800

Cited by 7 publications

(5 citation statements)

References 31 publications

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“…Here, we notice that the writing process appears to have obvious asymmetry under H x with different directions. We have confirmed after a literature search that writing asymmetry, the significantly different writing currents for high-to-low and low-to-high resistance switching because of natural stochastic behaviors of magnetization, is a fundamental issue in MRAM . Combined with circuit compensation techniques, the writing asymmetry of MRAM can be eased by precisely controlling MTJ structures .…”

Section: Temperature-dependent Sot Switchingmentioning

confidence: 54%

“…To study the dynamic SOT switching of the PMA pattern, we have measured the switching curves, assisting magnetic field H x = ±1000 Oe, and temperature ranging from 300 to 356 K. Here, to determine the amplitude of H x , we scanned the R xy versus current pulse (R xy −I) at different H x values, as shown in We have confirmed after a literature search that writing asymmetry, the significantly different writing currents for highto-low and low-to-high resistance switching because of natural stochastic behaviors of magnetization, is a fundamental issue in MRAM. 43 Combined with circuit compensation techniques, the writing asymmetry of MRAM can be eased by precisely controlling MTJ structures. 5 In addition, this asymmetry may also have much to do with defects in the prepared sample.…”

Section: ■ Temperature-dependent Sot Switchingmentioning

confidence: 99%

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Heat-Assisted Magnetization Switching in Flexible Spin–Orbit Torque Devices

Wang,

Liu,

et al. 2024

Nano Lett.

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Heat-assisted magnetic anisotropy engineering has been successfully used in selective magnetic writing and microwave amplification due to a large interfacial thermal resistance between the MgO barrier and the adjacent ferromagnetic layers. However, in spin−orbit torque devices, the writing current does not flow through the tunnel barrier, resulting in a negligible heating effect due to efficient heat dissipation. Here, we report a dramatically reduced switching current density of ∼2.59 MA/cm 2 in flexible spin−orbit torque heterostructures, indicating a 98% decrease in writing energy consumption compared with that on a silicon substrate. The reduced driving current density is enabled by the dramatically decreased magnetic anisotropy due to Joule dissipation and the lower thermal conductivity of the flexible substrate. The large magnetic anisotropy could be fully recovered after the impulse, indicating retained high stability. These results pave the way for flexible spintronics with the otherwise incompatible advantages of low power consumption and high stability.

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Section: Temperature-dependent Sot Switchingmentioning

confidence: 54%

Section: ■ Temperature-dependent Sot Switchingmentioning

confidence: 99%

Heat-Assisted Magnetization Switching in Flexible Spin–Orbit Torque Devices

Wang,

Liu,

et al. 2024

Nano Lett.

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Section: Current Density For Switching By Transverse Spins 51 Quantit...mentioning

confidence: 99%

“…[132]), in contrast to the simplified macrospin and domain wall depinning models (Figure 7c). It is also puzzling that a small out-of-plane magnetic field component (or a tiny deviation of the polar angle from 90 o ) can dramatically alter the switching behavior of a perpendicular magnetization in some samples, e.g., the Ta/Fe 60 Co 20 B 20 /TaO x samples [131,133] in Figure 10e. The existence of these outstanding puzzles is consistent with the aforementioned inaccuracy of the existing macrospin and domain wall motion models in predicting the switching current density of PMA heterostructures.…”

Section: Quantitative Models Of Switching Current Densitymentioning

confidence: 99%

Switching of Perpendicular Magnetization by Spin–Orbit Torque

Zhu

2023

Advanced Materials

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Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical switching of such perpendicular magnetization in an energy-efficient, deterministic, scalable manner has remained a big challenge. This problem has recently attracted enormous efforts in the field of spintronics. Here, we review recent advances and challenges in the understanding of the electrical generation of spin currents, the switching mechanisms and the switching strategies of perpendicular magnetization, the switching current density by spin-orbit torque of transverse spins, the choice of perpendicular magnetic materials, and summarize the progress in prototype perpendicular SOT memory and logic devices toward the goal of energy-efficient, dense, fast perpendicular spin-orbit torque applications.

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“…The applied field is 6 kOe and current is ±1.8 mA for all angle-dependent measurements. For the current-driven magnetization switching, we first apply a 1 ms current pulse (Ip) to switch the magnetization and then apply ±1.5 mA currents to measure AUMR after waiting for 3 s, similar to the measurement procedures for the current-driven perpendicular magnetization switching [31,32]. In all electrical measurements, the current is provided through a Keithley 6221 current source and the voltage is monitored by a Keithley 2000 multimeter.…”

Section: B Electrical Measurementsmentioning

confidence: 99%

Large Anomalous Unidirectional Magnetoresistance in a Single Ferromagnetic Layer

et al. 2022

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Unidirectional magnetoresistance (UMR) in a ferromagnetic bilayer due to the spin Hall effects (SHEs) provides a facile means of probing in-plane magnetization to avoid complex magnetic tunnel junctions.However, the UMR signal is very weak and usually requires a lock-in amplifier for detection even in the bilayer involving Ta or Pt with a large spin Hall angle (SHA). Here we report a type of UMR, termed as the anomalous UMR (AUMR), in a single CoFeB layer without any adjacent SHE layers, where the UMR signal is about 10 times larger than that in Ta/CoFeB structures and can be detected by using conventional dc multimeters in the absence of lock-in amplifiers. We further demonstrate that the extracted AUMR by excluding thermal contributions shows reversal signs for the CoFeB and NiFe single layers with opposite SHAs, indicating that the AUMR may originate from the self-generated spin accumulation interacting with magnetization through the giant magnetoresistance-like mechanism. These results suggest that the AUMR contributes UMR signals larger than the interfacial spin Hall UMR in the CoFeB-involved systems, providing a convenient and reliable approach to detect in-plane magnetization for the two-terminal spintronic devices.

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Write Asymmetry of Spin-Orbit Torque Memory Induced by in-Plane Magnetic Fields

Cited by 7 publications

References 31 publications

Heat-Assisted Magnetization Switching in Flexible Spin–Orbit Torque Devices

Heat-Assisted Magnetization Switching in Flexible Spin–Orbit Torque Devices

Switching of Perpendicular Magnetization by Spin–Orbit Torque

Large Anomalous Unidirectional Magnetoresistance in a Single Ferromagnetic Layer

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