MRS Proc. 2000 DOI: 10.1557/proc-610-b4.11 View full text
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Ant Ural, Serene Koh, P. B. Griffin, J. D. Plummer

Abstract: AbstractUnderstanding the coupling between native point defects and dopants at high concentrations in silicon will be key to ultra shallow junction formation in silicon technology. Other effects, such as transient enhanced diffusion (TED) will become less important. In this paper, we first describe how thermodynamic properties of the two native point defects in silicon, namely vacancies and self-interstitials, have been obtained by studying self-diffusion in isotopically enriched structures. We then discuss wh…

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