Wafer Scale Gallium Nitride Integrated Electrode Toward Robust High Temperature Energy Storage

Abstract

Gallium Nitride (GaN), as the representative of wide bandgap semiconductors, has great prospects in accomplishing rapid charge delivery under high‐temperature environments thanks to excellent structural stability and electron mobility. However, there is still a gap in wafer‐scale GaN single‐crystal integrated electrodes applied in the energy storage field. Herein, Si‐doped GaN nanochannel with gallium oxynitride (GaON) layer on a centimeter scale (denoted by GaN NC) is reported. The Si atoms modulate electronic redistribution to improve conductivity and drive nanochannel formation. Apart from that, the distinctive nanochannel configuration with a GaON layer provides adequate active sites and extraordinary structural stability. The GaN‐based supercapacitors are assembled and deliver outstanding charge storage capabilities at 140 °C. Surprisingly, 90% retention is maintained after 50 000 cycles. This study opens the pathway toward wafer‐scale GaN single‐crystal integrated electrodes with self‐powered characteristics that are compatible with various (opto)‐electronic devices.